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Porous ceramic Vacuum chuck
Boitsebiso bo potlakileng:
1. Mabitso a mang: Porous ceramic Vacuum chuck, Porous SiC chuck, porous chuck.
2. Kopo: Sesebelisoa sa adsorption se sebetsang ka mokhoa o phahameng se etselitsoeng ho fana ka mokhoa o nepahetseng le ho lokisoa ha li-wafers le li-ingots, tse loketseng bakeng sa tlhahiso ea semiconductor, li-wafer cutting, machining a nepahetseng, epitaxy e phahameng ea mocheso, etching, ho kenngoa ha ion le maemo a mang.
3. Litekanyetso tsa mantlha:
Porosity fetohang (10-200μm).
Mocheso o phahameng haholo (≤1600 ° C) , ho hanyetsa mocheso o babatsehang oa mocheso.
Adsorption vacuum: standard -90kPa (e ka ikamahanya le 100kPa).
Boholo ba senoelo sa monyo: Ts'ehetso ea li-wafers tsa 4/6/8/12 inch, boholo ba ingot bo ka etsoa.
Tlhaloso
Ceramic vacuum chuck ke sesebelisoa sa adsorption se sebetsang hantle haholo se etselitsoeng ho bapatsa ka nepo le ho lokisa li-wafers le li-ingots. E amohela sebopeho se kopantsoeng sa lesale la ka ntle la porous ceramic + tšepe, le kopantsoeng le moralo o hlophisitsoeng oa likanale tsa moea le li-pores ho fihlela kabo ea matla a adsorption le botsitso bo phahameng. E loketse tlhahiso ea li-semiconductor, ho seha li-wafer, ho sebetsa ka mokhoa o nepahetseng le maemo a mang, ho tšehetsa mocheso o phahameng, tikoloho e tsamaeang ka lebelo le phahameng, e ka finyella litlhoko tsa ho lumellana tsa boholo bo fapaneng ba li-wafers / ingot.
Tšebeletso Customized
Saese le mojaro ho itlhophisa
Stomata le ho ntlafatsa tsela ea moea
Ho ikamahanya le maemo a khethehileng
Mohlala oa moralo
dikopo
Tlhahiso ea semiconductor
Khōlo ea Epitaxial: Papatso e tsitsitseng ea li-wafers tsa SiC ka mocheso o phahameng ho qoba ho loana le ho silafala.
Lithography le etching: Sebaka se nepahetseng sethaleng se tsamaeang ka lebelo le phahameng (ho potlakisa ≤10G) ho netefatsa ho nepahala ha ho lumellana ha litšoantšo.
Ts'ebetso ea ingot
Ho khaola le ho sila: Ho kenngoa ha ingot e boima ea kristale (joalo ka sapphire, silicon carbide ingot) ho hatella ho phatloha ho bakoang ke ho thothomela.
Patlisiso ea mahlale le thekenoloji e khethehileng
Mocheso o phahameng oa annealing: likopi tsa porous silicon carbide tse monyang li sebetsa nako e telele ho 1600 ° C, ntle le ho fetoha le tšilafalo ea moea.
Ho roala ka Vacuum: Moralo o phahameng oa ho tiisa moea, o tsamaellana le tikoloho ea PVD/CVD.
Molemo oa Khatello
Sebopeho sa mantlha le melemo ea lintho tse bonahalang
1.Moqapi o kopantsoeng oa Multilayer
Lera la bokaholimo: Porous ceramic (khetho ea porous silicon carbide kapa porous graphite), aperture aperture adjustable (10-200μm) ho etsa bonnete ba phetisetso e ts'oanang ea matla a adsorption sebakeng sa wafer ho qoba khatello ea maikutlo ea lehae.
Matrix: Foreimi ea tšepe e thata e phahameng (tšepe e sa hloekang kapa motsoako oa aluminium) ho fana ka tšehetso ea sebopeho le ho tiisa moea.
Sefofane le li-pores: Marang-rang a ka hare a litsela tsa moea tse entsoeng hantle le li-micropores tse arohaneng ka ho lekana li tšehetsa ho ntšoa ha vacuum ka potlako (adsorption force up to -90kPa) le ho lokolloa hang-hang.
2. Papiso ea thepa ea thepa
| lintho tse bonahalang | Porous silicon carbide | Porous graphite |
| Ho hanyetsa mocheso | Mocheso o phahameng haholo (≤1600 ° C), khanyetso e ntle ea mocheso oa mocheso | Mocheso o phahameng o mahareng (≤800 ° C), conductivity e ntle ea mocheso |
| Ho tšoarella ha lik'hemik'hale | Acid le alkali corrosion resistance, plasma corrosion resistance | E hanyetsana le likhase tse se nang oxidizing, litšenyehelo tse tlase |
| Ketsahalo e sebetsang | Mocheso o phahameng oa epitaxy, etching, ho kenngoa ha ion | Sekhahla, ho sila, ho paka |
3. Ts'ebetso ea bohlokoa le litekanyetso tsa tekheniki
| Tlhaloso | mantsoe |
| Boholo ba Chuck | Ts'ehetso ea li-wafers tsa 4/6/8/12 inch, boholo ba ingot bo ka etsoa |
| Loading | Letlapa le le leng la boima ba 50kg (bolelele ≤300mm) |
| Ho sebetsa Mocheso | Porous silicon carbide: -50 ° C ~ 1600 ° C; Porous graphite: -50°C~800°C |
| Sekheo sa adsorption | Tloaelehileng -90kPa (e ka tloaeleha ho ea ho -100kPa) |
LBH
P: Mokhoa oa ho khetha porous silicon carbide le porous graphite chuck? Ke phapang efe e kholo lipakeng tsa porous silicon carbide le porous graphite chuck ka lits'ebetso tse phahameng tsa mocheso? Joang ho khetha thepa e nepahetseng bakeng sa boemo ba kopo?
A: Porous silicon carbide chuck:
Ho hanyetsa mocheso: ho ka sebetsa ka mokhoa o tsitsitseng ka mocheso o phahameng ka ho fetisisa ≤1600 ° C (joaloka SiC epitaxy, annealing ea mocheso o phahameng), ho hanyetsa mocheso o matla oa mocheso, o loketseng sebaka sa ho fetoha ha mocheso o matla.
Khanyetso ea kutu: hanela khoholeho ea asiti e matla, alkali le plasma, e loketseng etching, ho kenngoa ha ion le ts'ebetso e 'ngoe ea khase e senyang.
Porous graphite Chuck:
Thermal conductivity: Higher thermal conductivity (200-400 W / m·K), e loketseng bakeng sa maemo a hlokang ho fetisoa ha mocheso ka potlako (joaloka sephaphatha se khaola mocheso).
Moruo: Theko e tlaase, e loketseng ≤800 ° C tikoloho ea mocheso o bohareng (e kang ho paka, ho sila).
Litlhahiso tsa khetho:
Haeba mocheso oa ts'ebetso o> 800 ° C kapa ho hanyetsa kutu hoa hlokahala, porous silicon carbide e khethoa; Haeba ho lelekisa theko-e sebetsang hantle le tlaase tshebetso mocheso, ka khetha porous graphite.
