CVD SiC barbotage dikarolo Half-moon graphite

Semixlab e fana ka 'maraka ka likarolo tse ntle tsa CVD SiC tse koahelang Half-moon graphite e le karolo ea mantlha ea ts'ehetso ea kamore ea karabelo. Ka boqapi bo bocha bo habeli ba lisebelisoa le meaho, e fana ka tikoloho ea ts'ebetso e nang le mocheso o phahameng, mocheso o phahameng oa lik'hemik'hale le kotsi e tlase ea tšilafalo bakeng sa kholo ea SiC epitaxial. E fetohile ntho e ka sehloohong e sebelisoang ho phunyeletsa botlolo ea tlhahiso ea boima ba maqephe a epitaxial a boholo bo boholo le a tlaase.

Motheong oa tlhahiso ea semiconductor chip, botsitso ba ts'ebetso ea ho hola ea epitaxial ka kotloloho bo lekanya ts'ebetso le chai ea sesebelisoa. CVD SiC coating Half-moon graphite likarolo, e le lintho tse ka sehloohong consumables bakeng sa ho jara liphaphatha ka thepa epitaxial, ka katlehong ea lintho tse bonahalang composite le ho nepahala ho sebetsa thekenoloji, Rarolla bothata ba tahlehelo ka potlako le tšilafalo ea likopano tse tloaelehileng tsa graphite mochesong o phahameng (1200-1800 ℃) le likhase tse joalo tse senyang haholo.₄/C3H₈/H₂. Karolo e entsoe ka bohloeki bo phahameng ba isostatic bo hatelitsoeng ka SGL graphite substrate e nang le 50μm e teteaneng ea silicon carbide coating holim'a ts'ebetso ea lik'hemik'hale tsa mouoane (CVD), e kopanyang mocheso o phahameng oa mocheso oa graphite le ho hanyetsa mocheso o feteletseng oa silicon carbide. Geometry ea eona e ikhethang ea halofo ea khoeli (180 ° ± 5 ° arc, bophara ba ka ntle bakeng sa lisebelisoa tsa 4/6/8) e ntlafatsa ho lekana ha lesela la epitaxial ho isa ho ± 1.5% ka ho ntlafatsa tsela ea phallo le kabo ea tšimo ea mocheso, ha e ntse e thibela ho hasana ha litšila tsa tšepe (Fe le Al content <0.1ppm) ka har'a graphite substrate. Bophahamo ba sekoli ba lera la epitaxial bo fokotsehile ho ba tlase ho 0.05cm^-2.

Boholo:

6 intshi, 8 inch, 12 inch.

SiC epitaxial layer kgolo ya graphite susceptor.

Phapanyetsano ea khase ea khase le taolo ea tšimo ea mocheso ho SiC epitaxial growth sebōpi.

Hajoale, theknoloji e se e sebelisitsoe moleng o moholo oa tlhahiso ea silicon wafer epitaxy ea baetsi ba pele ba semiconductor naheng ea China, e khothaletsang kotulo e tloaelehileng ea lisebelisoa tsa SiC MOSFET ho tloha 90% ho isa ho 98%, le ho fokotsa litšenyehelo tsa epitaxy tsa sebōpi se le seng ka 40%. Nakong e tlang, ka ho potlakisa ts'ebetso ea tlhahiso ea li-wafer tsa 8-inch SiC, ntlafatso e kopantseng ea "gradient composite coating" (SiC / Si₃ N₄) le mochine o bohlale oa tsamaiso ea mocheso o tla khothalletsa karolo ho bapala bohlokoa ba indasteri ea lisebelisoa tsa motlakase tse phahameng haholo tse kang sefofane le motlakase o mocha oa koloi.

Tshebetso e ntle:

Ts'ebelisong e sebetsang ea kholo ea SiC epitaxial, karolo e bonts'a melemo e mengata ea ts'ebetso ho feta lisebelisoa tsa setso: silicon carbide coating thermal shock cycle capacity ea makhetlo a fetang 1000 (mocheso oa kamore ho isa ho 1800 ℃ phetoho ea tšohanyetso), bophelo bo tsoelang pele ba ts'ebeletso ea lihora tse fetang 2000 (ho bapisoa le graphite e sa koaloang makhetlo a 5). Ho phaella moo, coefficient ea ho atolosa mocheso (4.5 × 10^-6/K) e tsamaellana haholo le substrate ea graphite (4.8×10^-6/ K), e thibelang ka mokhoa o atlehileng ho phunyeha le ho senya likaroloana tse bakoang ke khatello e phahameng ea mocheso, le ho netefatsa kotsi ea tšilafalo ea zero sebōping sa ho hōla ha epitaxial.

Moralo o nepahetseng oa sebopeho: sebopeho sa tataiso ea halofo ea khoeli se ntlafatsa kabo ea khase, se fokotsa moferefere le ho futhumala ha lehae.

Phetoho e feteletseng ea tikoloho: Ho roala ha β-SiC ho hanyetsana le mocheso o phahameng oa oxidation le khoholeho ea plasma, 'me bophelo ba eona bo atolosoa ka makhetlo a fetang 3.

Ho lumellana ha tšimo ea mocheso: conductivity ea mocheso 300W / m·K, CTE le graphite substrate match, qoba ho phatloha ha khatello ea mocheso.

Ts'ebeletso e felletseng ea ts'ebetso: ts'ehetso ea ts'ebetso ea substrate, deposition deposition, tlhahlobo ea ts'ebetso ea ho fana ka sebaka se le seng.