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Mokelikeli o le mong oa epi graphite susceptor
| Sebaka sa Tšimoloho: | China |
| Name Brand: | Semixlab |
| Number Model: | SWEGS0001 |
| tiiseletswe: | ISO9001 |
| Ntho e nyenyane ea litaelo: | 1pc |
| Price: | Customized |
| Lintlha tsa ho Packa: | Lebokose le tloaelehileng la ho romela thepa |
| Nako ea thomello: | 30-45days |
| Terms tefello: | Ho ka buisanoa |
| Phepelo Matla: | 300pcs ka khoeli |
Tlhaloso
ASM monolithic epitaxial tray e etselitsoe bakeng sa ts'ebetso e phahameng ea silicon carbide (SiC), gallium nitride (GaN) le ts'ebetso e 'ngoe ea moloko oa boraro oa semiconductor epitaxial, sehlahisoa se kenyelletsa setei sa graphite, selikalikoe sa graphite le lisebelisoa tse ling, ho sebelisa bohloeki bo phahameng ba graphite substrate + mouoane deposition silicon carbide sebopeho se phahameng sa lik'hemik'hale le mocheso oa lik'hemik'hale. ho tšoana ha tšimo ea mocheso. Ke karolo ea mantlha ea letlapa la epitaxial e nepahetseng haholo tlhahisong ea bongata.
Boitsebiso bo potlakileng:
1. Mabitso a mang: 6 inch wafer epi susceptor, 8 inch wafer epi susceptor, graphite susceptor, single wafer susceptor.
2. Kopo: Bakeng sa ts'ebetso e phahameng ea silicon carbide (SiC), gallium nitride (GaN) le mokhoa o mong oa boraro oa semiconductor epitaxial process.
songolo
| Lintho tsa motheo tsa 'mele tsa CVD SiC coating | |
| Property | Boleng bo tloaelehileng |
| Sebopeho sa Crystal | FCC β phase polycrystalline, haholo-holo (111) e sekametseng |
| segokanyipalo | 3.21 g, / cm³ |
| thatafala | 2500 Vickers boima (moroalo oa 500g) |
| Boholo ba lijo-thollo | 2 ~ 10μm |
| K'hemik'hale e Hloekileng | 99.99995% |
| Mocheso bokgoni | 640 J·kg-1·K-1 |
| Sublimation Mocheso | 2700 ° C |
| Matla a Flexural | 415 MPa RT 4-ntlha |
| Modulus ea Bacha | 430 Gpa 4pt kobeha, 1300 ℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Katoloso ea Thermal(CTE) | 4.5 × 10-6K-1 |
Mesebetsi ea Motheo le Lintlha-khōlō tsa Moqapi
Tlhahiso ea lintho tse bonahalang: graphite + SiC coating
Graphite
-Ultra-high thermal conductivity (> 130 W / m·K), karabelo e potlakileng ho litlhoko tsa taolo ea mocheso, ho netefatsa botsitso ba ts'ebetso.
-Coefficient e tlase ea ho atolosa mocheso (CTE: 4.6 × 10⁻⁶/°C), fokotsa ho senyeha ha mocheso o phahameng, ho lelefatsa bophelo ba tšebeletso.
| Lintho tsa 'mele tsa graphite ea isostatic | ||
| Property | Unit | Boleng bo tloaelehileng |
| Tekanyo ea bongata | g / cm³ | 1.83 |
| thatafala | H.S.D. | 58 |
| Phalliso ea Motlakase | μΩ.m | 10 |
| Matla a Flexural | MPa | 47 |
| Compressive Matla | MPa | 103 |
| Matla a tšepe | MPa | 31 |
| Modulus e monyane | GPA | 11.8 |
| Katoloso ea Thermal(CTE) | 10-6K-1 | 4.6 |
| Thermal Conductivity | W·m-1·K-1 | 130 |
| Karolelano ea Boima ba Thollo | μm | 8-10 |
Ho roala ha CVD SiC
- Ho hanyetsa ho bola. Hanela tlhaselo ea likhase tse arabelang joalo ka H₂, HCl, le SiH₄. E qoba ho silafala ha lera la epitaxial ka ho volatilization ea thepa ea motheo.
-Surface densification: porosity ea ho roala e ka tlase ho 0.1%, e thibelang ho kopana pakeng tsa graphite le wafer le ho thibela ho hasana ha litšila tsa carbon.
-Ho mamella mocheso o phahameng: mosebetsi o tsitsitseng oa nako e telele tikolohong e ka holimo ho 1600 ° C, ho ikamahanya le tlhokahalo e phahameng ea mocheso oa SiC epitaxy.
| Lintho tsa motheo tsa 'mele tsa CVD SiC coating | |
| Property | Boleng bo tloaelehileng |
| Sebopeho sa Crystal | FCC β phase polycrystalline, haholo-holo (111) e sekametseng |
| segokanyipalo | 3.21 g, / cm³ |
| thatafala | 2500 Vickers boima (moroalo oa 500g) |
| Boholo ba lijo-thollo | 2 ~ 10μm |
| K'hemik'hale e Hloekileng | 99.99995% |
| Mocheso bokgoni | Ka 640 J·kg-1·K-1 |
| Sublimation Mocheso | 2700 ° C |
| Matla a Flexural | 415 MPa RT 4-ntlha |
| Modulus ea Bacha | 430 Gpa 4pt kobeha, 1300 ℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Katoloso ea Thermal(CTE) | 4.5 × 10-6K-1 |
Sebaka sa mocheso oa mocheso le moralo oa ho ntlafatsa phallo ea moea
Sebopeho se ts'oanang sa mahlaseli a mocheso
Sebaka sa susceptor se entsoe ka li-grooves tse ngata tse bontšang mocheso oa mocheso, 'me mochine oa tsamaiso ea mocheso oa mocheso oa mochine oa ASM o finyella ho tšoana ha mocheso ka hare ho ± 1.5 ° C (6-inch wafer, 8-inch wafer), ho netefatsa ho tsitsisa le ho tšoana ha epitaxial layer thickness (fluctuation <3%).
Mokhoa oa ho tsamaisa moea
Likoti tse khelohang moeling le litšiea tse tšehelitsoeng li etselitsoe ho ntlafatsa phallo ea laminar ea khase e arabelang holim'a metsi, ho fokotsa phapang ea sekhahla sa deposition se bakoang ke maqhubu a eddy, le ho ntlafatsa ts'ebetso ea doping.
Ho lumellana le ho tšepahala
Ho ikamahanya le maemo a mangata
E lumellana le 4H-SiC, 6H-SiC homoepitaxy, le GaN-on-SiC mekhoa ea heteroepitaxy, e tšehetsa N / P mofuta oa doping (joalo ka N₂, Al doping).
Ho boloka bophelo bo bolelele
Ho thatafala ha silicon carbide coating ho fihla ho 430 Gpa 4pt bend, 1300 ℃, ho hanyetsa khoholeho ea likaroloana ho eketseha ka makhetlo a fetang 3, bophelo ba tšebeletso ea terei e le 'ngoe bo feta lihora tse 5000 tsa ts'ebetso,' me litšenyehelo tsa lisebelisoa tse ngata li fokotsehile.
Likarolo tsa kopo
Sesebelisoa sa motlakase sa SiC sa koloi
Mojule oa pele oa 5G RF
Mekhoa ea ho boloka matla a photovoltaic le matla
Tekheniki Specifications Overview
| Item | ga tlhaloso |
| Base boitsebiso | Isostatic high purity graphite (bohloeki> 99.9995%) |
| Theknoloji ea ho roala | Kemiso ea mouoane oa lik'hemik'hale (CVD) ea silicon carbide |
| Boholo ba sephaephe | 4/6/8 inch (ka tloaelo) |
| Boholo ba mocheso o sebetsang | 1650°C (tikoloho ea khase e sa sebetseng) |
| Ho tšoana ha mocheso | ≤±1.5°C (6-inch wafer, mokhoa o tsitsitseng oa boemo) |
| Ho roala botenya | 50-500 μm (E ka feto-fetoha, ±10 μm ho nepahala) |
Molemo oa Khatello
Ts'ebetso e tsitsitseng: Ka moralo oa mantlha o ts'oanang oa lisebelisoa tsa ASM, nako ea tokiso ea sebaka sa mocheso le phallo ea moea e fokotsehile.
Boitlamo ba tšilafalo ea Zero: Liaparo tsa SiC li feta SEMI e tloaelehileng ea ho lemoha litšila tsa tšepe (Fe, Ni, joalo-joalo <1ppb).
Tlhokomelo ea karabelo e potlakileng: Sebopeho sa modular tray, tšehetso bakeng sa phetisetso ea inthanete le tšehetso ea tekheniki.