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TaC e ile ea koahela likarolo tsa halofo ea khoeli bakeng sa LPE
Boitsebiso bo potlakileng:
1. Mabitso a mang: TaC e koahetsoeng ka karolo ea graphite, CVD tantalum carbide e koahetsoeng susceptor bakeng sa SiC epitaxy.
2. Kopo: SiC epitaxy graphite spare part,SiC epitaxial kgolo e kang MOCVD,LPE.
3. Likarolo: Tantalum carbide (TaC) e na le ntlha ea ho qhibiliha ho fihlela ho 3880 ° C. E ka sebetsa nako e telele mocheso oa likhato tse 2000 tsa Celsius.
Tlhaloso
Tlhatlhobo ea sehlahisoa
Likarolo tse koahetsoeng ke Tantalum carbide (TaC) ke karolo ea bohlokoa e etselitsoeng lisebelisoa tsa epitaxial tsa silicon carbide (SiC), joalo ka lisebelisoa tsa LPE, ho sireletsa likamore tsa karabelo le ho ntlafatsa botsitso ba ts'ebetso mocheso o phahameng, tikoloho e senyang. Ha ho bapisoa le liphahlo tse tloaelehileng tsa silicon carbide (SiC), liphahlo tsa tantalum carbide li fetohile tharollo ea mantlha ea ntlafatso ea moloko o mocha oa lisebelisoa tsa semiconductor epitaxial ka lebaka la ho hanyetsa mocheso o phahameng haholo, ho se sebetse ha lik'hemik'hale le botsitso ba mocheso.
songolo
| Thepa ea 'mele ea ho roala ha TaC | |
| segokanyipalo | 14.3 (g/cm³) |
| Essivity e khethehileng | 0.3 |
| Coefficient ea mocheso oa mocheso | 6.3 10-6/K |
| Ho thatafala (HK) | 2000 HK |
| itoanela hoo ho | 1 × 10-5 Ohm*cm |
| Thermal botsitso | <2500 ℃ |
| Boholo ba graphite bo fetoha | -10 ~ 20um |
| Ho roala botenya | ≥20um boleng bo tloaelehileng (35um±10um) |
dikopo
Boemo ba kopo le boleng
Likarolo tsa halofo tsa khoeli tsa Tantalum carbide li sebelisoa haholo maemong a latelang a bohlokoa:
SiC epitaxial kgolo thepa: ka LPE (mokelikeli mohato epitaxial), CVD (lik'hemik'hale mouoane deposition) le mekhoa e meng, e le karolo e sireletsang ea kamoreng ea karabelo, ho etsa bonnete ba hore mocheso o phahameng o lumellana le ts'ebetso e tsitsitseng.
Moloko oa boraro oa tlhahiso ea semiconductor: e loketseng bakeng sa tlhahiso ea likarolo tse ngata tsa semiconductor semiconductor epitaxial tse kang silicon carbide (SiC) le gallium nitride (GaN), ho finyella litlhoko tsa boleng bo phahameng ba maqephe a epitaxial bakeng sa likoloi tsa motlakase, puisano ea 5G le lisebelisoa tsa sefofane.
Ha ho bapisoa le seaparo sa setso sa silicon carbide
| Ho roala ha Tantalum carbide (TaC). | Seaparo sa setso sa silicon carbide (SiC). |
| Mocheso o phahameng o mamellehang>2000°C | ~ 1600 ° C |
| Khanyetso e babatsehang ea mocheso | Sekhahla se tlase sa kutu ea lik'hemik'hale (tikoloho e sa sebetseng) e phahame (ho bonolo ho sebetsana le Cl/H₂) |
| Mocheso o phahameng o mamellehang>2000°C | Bophelo ba tšebeletso bo atolosoa ka makhetlo a 2-3 a tloaelehileng |
Ho phethahala ha theknoloji le ts'ebetso ea ts'ebetso
The tantalum carbide barbotage e lokiselitsoe ke pele lik'hemik'hale mouoane deposition (CVD) kapa 'mele deposition mouoane (PVD) tshebetso, ho etsa bonnete ba le botenya ba barbotage ntle le sekoli le junifomo le botenya laolehang (hangata 50μm). Bakeng sa litlhoko tse ikhethang tsa lisebelisoa tsa semiconductor, theknoloji ea gradient doping e ka sebelisoa hape ho ntlafatsa sekhomaretsi pakeng tsa ho roala le substrate, le ho ntlafatsa le ho feta ho hanyetsa mokhathala oa mocheso.
Molemo oa Khatello
Melemo ea mantlha ea ho roala ha tantalum carbide
Botsitso bo botle ka mocheso o feteletseng:
Tantalum carbide (TaC) e na le ntlha e qhibilihang e fihlang ho 3880°C (e holimo haholo ho feta silicon carbide's 2700°C) mme e boloka botšepehi ba sebopeho mochesong o ka holimo ho 1800°C. Tšobotsi ena e etsa hore e be e babatsehang ka mekhoa ea mocheso e phahameng haholo bakeng sa kholo ea SiC epitaxial (e kang MOCVD, LPE), ho qoba ho hloleha ho koahela ka lebaka la khatello ea mocheso kapa phetoho ea mohato.
Boiketlo bo botle ba lik'hemik'hale:
Ts'ebetsong ea SiC epitaxy, hangata ho na le likhase tse sebetsang tse nang le silicon (Si), hydrogen (H₂) le halogen (Cl) ka kamoreng ea karabelo. Ho hanyetsa kutu ha tantalum carbide barbotage ho likhase tse joalo ho molemo haholo ho feta silicon carbide, e ka fokotsang ka katleho karabelo ea lehlakore pakeng tsa ho roala le khase e arabelang, ka hona ho fokotsa kotsi ea tšilafalo ea likaroloana le ho ntlafatsa boleng ba lera la epitaxial.
Khokahano e tlase ea katoloso ea mocheso:
Coefficient ea katoloso ea mocheso ea tantalum carbide (~ 6.3×10⁻⁶/K) e haufi le ea graphite substrate (~4.2×10⁻⁶/K), e ka fokotsang khatello ea maikutlo e bakoang ke ho palama libaesekele, ho qoba ho petsoha kapa ho ebola, le ho lelefatsa bophelo ba tšebeletso ea karolo.
Fokotsa litšenyehelo tsa tlhokomelo le ho eketsa tlhahiso:
Liaparo tsa setso tsa SIC li bonolo ho oxidize kapa ho itšoara ka likhase tse sebetsang ka mocheso o phahameng, o hlokang nako ea ho phomola khafetsa bakeng sa tlhokomelo. The durability ea tantalum carbide barbotage ka haholo atolosa potoloho ea tlhokomelo, fokotsa theolelo ea thepa, le fokotsa litšenyehelo ka kakaretso ho feta 30%.
