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Silicon Carbide Sic Porous Ceramic Disc
Silicon Carbide (SiC) Porous Ceramic Disc e tsoang ho Semixlab e etselitsoe lisebelisoa tse phahameng tsa ts'ebetso ea semiconductor wafer e hlokang ho nepahala, ho hloeka le ho tšoarella. Ka micro-porosity e laoloang, mocheso o phahameng oa mocheso, le ho se sebetse ha lik'hemik'hale, karolo ena e phetha karolo ea bohlokoa ho vacuum chucking, CMP (Chemical Mechanical Polishing), epitaxy, le mekhoa ea ho sebetsana le li-wafer.
Tlhaloso
E loketse bakeng sa: Li-platform tsa CMP, li-epitaxy reactors tsa MOCVD, li-modules tsa ho fetisa liphaephe, lisebelisoa tsa ho hloekisa plasma, le likopano tsa substrate tsa ESC.
Ⅰ. Sebopeho sa Lintho le Litšobotsi tsa 'Mele
Sebopeho sa Ceramic sa SiC se Phahameng se Phahameng
E entsoe ho tloha ≥99.9% ultra-pure α-SiC kapa β-SiC powders, disc e 'ngoe le e' ngoe e nang le porous e etsoa ka mokhoa o nepahetseng o laoloang ke sintering le mekhoa ea ho kenella. Sephetho ke marang-rang a pore a ts'oanang a tiisang phallo e tsitsitseng ea khase le botšepehi ba mechine tlas'a maemo a ts'ebetso e feteletseng.
Lintho tsa Bohlokoa tsa Tekheniki:
| Property | ga tlhaloso |
| lintho tse bonahalang | α-SiC / β-SiC |
| Ho hloeka | ≥99.9% |
| Kutloelo-bohloko | 10–40% (e ka feto-fetoha) |
| Boholo ba Pore | 0.1–10μm |
| Ho khanna ho chesang | 120–200 W/m·K |
| Max Operating Temp | 1600-1800 ° C |
| thatafala | Mohs 9.3 |
| Khanyetso ea Lik'hemik'hale | E ntle haholo ho HF, HCl, Cl₂, H₂ |
| segokanyipalo | 2.8–3.1 g/cm³ |
Lintlha-kholo tsa Ts'ebetso:
● Uniform Vacuum Permeability: Kabo e nepahetseng ea pore e etsa bonnete ba hore khase e phalla ka mokhoa o leka-lekaneng ho pholletsa le bokaholimo.
● Botsitso bo Botle ba Thermal: E boloka botšepehi ba mechine tlas'a libaesekele tse phahameng tsa mocheso.
● Moloko o Tlase oa Particle: Libaka tsa SiC tse bentšitsoeng li fokotsa kotsi ea tšoaetso.
● Ho Tšoaroa ho Phahameng: Bophelo bo atolositsoeng ba tšebeletso esita le libakeng tse mabifi tsa lik'hemik'hale le tsa plasma.
Ⅱ. Mathata a Tloaelehileng a Ts'ebetso le Litharollo tsa Semixlab
| hlahisitse phephetso | Sesosa sa ho qala | Litharollo tsa Semixlab |
| Sekhahla se sa Lekaneng sa Vacuum | Bongata ba pore e sa tshwaneng kapa ho thiba | Kabo ea boholo ba pore le ho hloekisa plasma nako le nako |
| Tšilafalo ea likaroloana | Li-micro-cracks tse tsoang ho baesekele ea mocheso | Etsa kopo ea CVD SiC coating bakeng sa ho matlafatsa holim'a metsi |
| Thermal Non-Uniformity | Boima bo sa lekaneng kapa tshilafatso | Sebelisa high-conductivity SiC (> 150 W/m`K) le libaka tse bentšitsoeng |
| Khoholeho ea Lik'hemik'hale | Ho pepesetsoa nako e telele ho HF kapa likhase tse thehiloeng ho Cl | Amohela sintering e nyalisitsoeng ea CVD SiC ho matlafatsa khanyetso ea kutu |
| Matla a Mechini a Fokotseng ka Nako | Khatello ea maikutlo e pheta-phetoang | Ho kenella ka bobeli ho ntlafatsa ho tiea ha fracture le ho lelefatsa bophelo ba ts'ebeletso |
Taolo ea thepa ea thepa ea Semixlab le boenjiniere ba holim'a metsi li netefatsa ts'ebetso e tsitsitseng, ts'epahalo ea nako e telele, le ho fokotsa nako ea lisebelisoa ho pholletsa le lipotoloho tse ngata tsa ts'ebetso. Rea u amohela ho ikopanya le rona bakeng sa lipuisano tse ling tsa tekheniki le lits'ebeletso tsa ho hlophisa lihlahisoa.
dikopo
Likopo ho Mekhoa ea Semiconductor
1. Wafer Vacuum Chucking le Ho tšoara
Li-discs tsa Porous SiC li sebelisoa haholo joalo ka lipoleiti tsa vacuum chuck kapa litšehetso tsa sejari ho li-wafer loading le litsamaiso tsa phetisetso. Porosity ea bona e hlophisitsoeng hantle e netefatsa ho huloa ha vacuum e ts'oanang, ho tlosa deformation ea wafer le ho ntlafatsa ho nepahala ha tlhophiso.
2. Chemical Mechanical polishing (CMP)
Nakong ea CMP, porous SiC disc e sebetsa e le sepalangoang kapa poleiti e tšehetsang, e nolofalletsang:
● Esita le kabo ea seretse
● Tšehetso e tsitsitseng ea wafer
● Polane e ntlafalitsoeng le taolo ea liphoso
Ha e bapisoa le alumina e tloaelehileng kapa quartz, SiC e fana ka boima bo phahameng le ho tsamaisa mocheso, ho netefatsa nako e telele ea bophelo le ts'ebetso e ntlafalitsoeng ea ts'ebetso.
3. Epitaxy le High-Mocheso Processing
Ho MOCVD le LPE epitaxial reactors, SiC porous disc e sebetsa e le setsi sa mocheso oa mocheso kapa sethala sa tšehetso, ho netefatsa:
● Ho fetisoa ha mocheso ka mokhoa o tšoanang ho pholletsa le sephaphatha
● Botenya bo tsitsitseng ba epitaxial layer
● Ho hanyetsa ho matla ha likhase tse sebetsang hantle
4. Metsi le Plasma Cleaning Systems
Ka lebaka la khanyetso ea eona ea lik'hemik'hale le ea plasma, SiC disc e nang le porous e sebetsa ka katleho e le poleiti ea phallo ea khase kapa substrate ea ho hloekisa lik'hemik'hale libencheng tse metsi le likamore tsa ho hloekisa.
5. ESC (Electrostatic Chuck) Base Layer
Mehatong e tsoetseng pele ea li-wafer, li-ceramics tsa SiC tse porous li sebetsa e le metheo ea mocheso bakeng sa li-ESC, tse kopanyang phetisetso e ntle ea mocheso le ho kenya motlakase bakeng sa taolo e nepahetseng ea mocheso.
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