SiC Coated Wafer holder

SiC Coated Wafer Holder ke ts'ehetso ea wafer e etselitsoeng lits'ebetso tsa mocheso o phahameng oa semiconductor. E sebelisa bohloeki bo phahameng ba graphite substrate + CVD SiC coating, e na le khanyetso e ntle ea kutu, ho hanyetsa mocheso oa mocheso le litšobotsi tse tlaase tsa tšilafalo, 'me e sebelisoa haholo lits'ebetsong tsa bohlokoa tse kang SiC/GaN epitaxy, MOCVD, CVD, le diffusion ho netefatsa phetisetso e tsitsitseng le tlhahiso e phahameng ea lihlahisoa tsa li-wafers tikolohong ea mocheso o phahameng.

e sebetsa joang:

Li-wafer carriers tsa SiC (Silicon Carbide) li sebelisoa ho semiconductor, photovoltaic, LED le tlhahiso ea lisebelisoa tsa elektroniki tse tsoetseng pele ka lebaka la thepa ea tsona e ikhethang.

Litšebeletso li ka fanoa: 

tlhahlobo ea boemo ba ts'ebeliso ea bareki, lisebelisoa tse tsamaellanang, ho rarolla mathata a tekheniki.

Technical di-parameter

Libaka tsa kopo tse ka sehloohong

Ecological chain netefatso

Semixlab SiC Coated Wafer holder e sebelisa phofo e phahameng ea silicon carbide 'me e netefalitsoe ke ISO, e e etsa "molekane ea ka tšeptjoang" bakeng sa tlhahiso e phahameng ea semiconductor e nang le lintlafatso tsa ts'ebetso tse quantifiable (kotulo, bophelo, bohloeki).

Mokhoa o tloaelehileng oa kopo

Tlhokomelo ea pele → Khetho ea thepa → Ho sebetsa → Ho hloekisa → Ho hloekisoa ka holim'a metsi (Ho hloekisoa ha lik'hemik'hale) → Ho beoa ha SiC coating (CVD) → Ts'ebetso ea morao-rao → Ho belisoa ha mocheso holim'a sefahleho → Teko ea Sekoli → Teko ea Ts'ebetso → Teko ea Ts'ebetso, Teko ea Ts'ebetso Teko ea Baesekele → Ho Hloekisa le ho Pakaletsa

Ka ts'ebetso ea ts'ebetso ea paramethara, Semixlab SiC Coated Wafer holder e fihletse tsoelo-pele e kholo lits'ebetsong tsa tlhahiso ea semiconductor (joalo ka CVD, kholo ea epitaxial, etching, joalo-joalo), butle-butle e nkile thepa e tsoang kantle ho naha 'marakeng oa semiconductor. Haeba o hloka ho fumana lintlha tse qaqileng tsa lipampiri tse tšoeu tsa tekheniki kapa ho hlophisa tlhahlobo ea sampole, ka kopo ikopanye le sehlopha sa rona sa tšehetso ea tekheniki.

Melemo ea mantlha ea Semixlab SiC Coated Wafer holder

E babatsehang ho hanyetsa mocheso o phahameng

Botsitso bo phahameng ba mocheso: SiC e na le ntlha ea ho qhibiliha ho fihlela ho 2700 ℃ 'me e ka sebetsa ka mokhoa o tsitsitseng ka nako e telele sebakeng sa ts'ebetso ea 1000 ℃ ~ 1600 ℃ (e kang CVD, MOCVD, kgolo ea epitaxial, joalo-joalo), e molemo haholo ho feta tšepe e sa hloekang kapa li-aluminium alloy carriers. Mocheso o tlase oa katoloso, ha ho bonolo ho holofala ha mocheso o le holimo, 'me o boloka boemo ba wafer bo nepahetse.

Thermal shock resistance: SiC e na le conductivity e phahameng ea mocheso, e ka felisa mocheso ka potlako le ka mokhoa o lekanang, 'me e fokotsa kotsi ea ho phatloha ho bakoang ke liphetoho tsa tšohanyetso tsa mocheso (e tšoarellang ho feta graphite).

E babatsehang corrosion le ho hanyetsa tšilafalo

E hanyetsana le likhase tse senyang tse kang HCl, H2, NH3 (e tloaelehileng ka mekhoa ea etching le epitaxial), e thibelang mochine hore a se ke a senyeha le ho baka tšilafalo ea likaroloana. Ts'ebetso e matla ea anti-oxidation, e tsitsitseng ho feta graphite maemong a phahameng a mocheso a nang le oksijene (graphite e hloka tšireletso ea ho roala, ha SiC ka boeona e hanyetsana le oxidation). Ho roala ha SiC ho ka finyella bohloeki ba ho feta 99.999%, ho thibela litšila tsa tšepe (tse kang Fe, Ni) ho silafatsa lesela, 'me li loketse ka ho khetheha bakeng sa tlhahiso ea silicon-based le wide bandgap semiconductor (GaN, SiC).

Phahameng phetha molao matla le apara ho hanyetsa

Boima bo phahameng (Mohs hardness 9.2, ea bobeli ho daemane), bokaholimo ha bo bonolo ho otlolla, ho fokotsa kotsi ea ho tsoa le ho lelefatsa bophelo ba ts'ebeletso. E loketse lits'ebetso tse hlokang ho kopana khafetsa joalo ka CMP (chemical mechanical polishing), ho hanyetsa ho roala ho molemo ho feta liphahlo tsa tšepe kapa tsa ceramic. Ha ho bonolo ho holofala tlas'a mojaro o phahameng oa mocheso le ho boloka ho bata ha sephaphatha (ha ho bapisoa le graphite, e leng bonolo ho senya).

E babatsehang conductivity ea mocheso le ho tšoana ha mocheso

Mocheso o potlakileng oa mocheso o tiisa ho futhumala ho tšoanang ha sephaphatha (ho fokotsa botenya bo sa lekaneng nakong ea kholo ea epitaxial). E loketse ts'ebetso ea ho nyoloha ka potlako le ho theoha ha mocheso (joalo ka RTP annealing e potlakileng) ho ntlafatsa katleho ea tlhahiso. Mocheso oa ho atolosa mocheso oa SiC o haufi le oa li-wafers tsa silicon (Si) le silicon carbide (SiC), ho fokotsa bofokoli ba lattice bo bakoang ke khatello ea mocheso.

Bophelo bo bolelele le litšenyehelo tse tlase tsa tlhokomelo

Libakeng tsa plasma (joalo ka etching e omeletseng), SiC e na le khanyetso e ntle ea ho sputtering ho feta aluminium kapa quartz, 'me bophelo ba eona bo ka eketsoa ka makhetlo a 3 ho isa ho a 5. Bokaholimo bo teteane ebile bo boreleli, 'me ha ho bonolo ho monya masalla a tšebetso. E ka sebelisoa hape ka ho chesoa ka mocheso o phahameng kapa ho hloekisa lik'hemik'hale.

Ho lumellana le ho feto-fetoha ha moralo

Liaparo tsa SiC li ka kenngoa holim'a li-substrates tse kang graphite, molybdenum, le carbon fiber, ho nahanela bobeli bo bobebe le matla a phahameng. Ka CVD kapa mekhoa ea ho fafatsa, mehaho e rarahaneng ea bajari (e kang mehaho ea porous le lisebelisoa tse futhumatsang tse kentsoeng) li ka lokisoa.