Silicon Carbide sebōpi tube
| Sebaka sa Tšimoloho: | China |
| Name Brand: | Semixlab |
| Number Model: | SCFT-01 |
| tiiseletswe: | ISO9001 |
| Ntho e nyenyane ea litaelo: | Setsi sa 1 |
| Price: | Ikopanye bakeng sa Khotheishene e Itlhophileng |
| Lintlha tsa ho Packa: | Lebokose la Anti-Static + Plywood (O ka khonahala) |
| Nako ea thomello: | Matsatsi a 60-90 Ka mor'a Tiisetso ea Taelo |
| Terms tefello: | T / T |
| Phepelo Matla: | 100 Units/Kgwedi |
Tlhaloso
Semixlab e fana ka Ultra-high purity SiC furnace tube system, semiconductor-grade thermal field solutions ka 99.9999% coating purity le Complete line delivery.
Tlhahiso ea boleng ba mantlha
Fana ka tikoloho ea mocheso e se nang tšilafalo bakeng sa tlhahiso ea liphaphatha: 99.9% SiC bohloeki ba substrate + 99.9999% bohloeki ba CVD coating, e kopantsoeng le SiC cantilever paddle & wafer boat system, ho fihlela ts'ilafalo ea tšepe ea zero ka kamoreng ea ts'ebetso.
Mabitso a fapaneng a lihlahisoa:
Mocheso o phahameng oa SiC, tube ea silicon carbide;Tube ea SiC e hloekileng e phahameng;Tube ea Silicon carbide bakeng sa sebōpi sa sebopi; Silicon carbide tube bakeng sa ho hasana le ts'ebetso ea LPCVD;Tube ea SiC ea RTP, tube ea SiC bakeng sa oxidation
Litlhaloso tsa mantlha:
Bohloeki ba lintho tse bonahalang: Thepa ea motheo ke silicon carbide e nang le bohloeki bo fetang 99.9%, 'me ho hloeka ka mor'a ho roala ha CVD ho feta 99.9999% (6N grade).
Ts'ebetso ea mocheso: Mocheso o phahameng oa ho sebetsa 1650 ℃ (nako e telele), coefficient ea katoloso ea mocheso: 4.6 × 10⁻⁶/℃, ho tšoana sebakeng sa mocheso o sa khaotseng: ± 1.5℃ (1200℃);
Matla a mochini: Matla a ho kobeha 450Mpa (ka mocheso oa kamore).

songolo
| Thepa ea 'mele ea Sintered Silicon Carbide | |
| Property | Boleng bo tloaelehileng |
| lik'hemik'hale Sebopeho | SiC>99.9% |
| Tekanyo ea bongata | >3.07 g/cm³ |
| porosity e bonahalang | |
| Modulus ea ho phatloha ho 20 ℃ | 270 MPa |
| Modulus ea ho phatloha ho 1200 ℃ | 290 MPa |
| Ho thatafala ho 20 ℃ | 2400 Kg/mm² |
| Ho robeha ho thata ho 20% | 3.3 MPa · m1/2 |
| Thermal Conductivity ho 1200 ℃ | 45 w/m .K |
| Katoloso ea mocheso ho 20-1200 ℃ | 4.6 × 10-6/℃ |
| Max.mocheso o sebetsang | 1650 ℃ (nako e telele) |
| Ho hanyetsa mocheso oa mocheso ho 1200 ℃ | Good |
dikopo
Lisebelisoa tse ka sehloohong
Thermal field carrier
Theha sebaka sa mocheso se tsitsitseng le se ts'oanang ka har'a mefuta ea 1200 ℃ ho ea ho 1650 ℃ (phapang ea mocheso sebakeng sa mocheso o sa khaotseng ke ≤± 1.5 ℃)
Netefatsa maemo a thermodynamic a lits'ebetso tse joalo ka phallo, oxidation le annealing.
Tšilafalo ea ho itšehla thajana
Thibela ho ata ha li-ion tsa tšepe (tse kang Fe/Ni/Cu, joalo-joalo) ka thepa e hloekileng haholo (e kang SiC).
Thibela tšilafalo lipakeng tsa likhase tsa tšebetso le tikoloho e kantle.
Seteishene sa khase
Laola ka nepo tataiso ea phallo le kabo ea likhase tse arabelang (joalo ka O₂/N₂/SiH₄, jj.)
Finyella karabelo e ts'oanang ea khase sebakeng sa sephaphatha (joalo ka kholo ea SiO₂).
Ho roala ha photovoltaic: Tšehetsa TOPCon / HJT cell PECVD mokhoa oa ho tsamaisa lipalangoang.
Liketsahalo tsa kopo
● Epitaxy
● Oxidation / Diffusion
● mokhoa oa LPCVD/PECVD
● Ho kenngoa ha li-semiconductors tse kopantsoeng tsa III-V
Litharollo ho lintlha tse bohloko tsa indasteri
Litharollo tsa rona li sebetsana le lintlha tse bohloko tsa bareki ba rona:
1. Ho silafala ha likaroloana tsa mocheso o phahameng oa mocheso: 6N ea ho roala e thibela pula ea litšila.
Ho nkeloa sebaka khafetsa ha SiC likarolong tsa quartz ho eketsa ho hanyetsa kutu ka makhetlo a 8.
2. Moqapi oa ho lumellana ha CTE bakeng sa ho se lumellane ha katoloso ea mocheso ea likarolo tsa mocheso oa mocheso letotong lohle la lisebelisoa tsa SiC.
3. Ultra-bentšitsoe holim'a phekolo ea tšilafalo tšepe ka morao ea sephaphatha (Ra 0.2μm).
Molemo oa Khatello
Melemo ea mantlha ea likarolo tsa tekheniki ea likarolo:
1. SiC sebōpi tube - Base thepa bohloeki: 99.9% sintered silicon carbide
▶ Ho hanyetsa mocheso oa mocheso ho matlafatsoa ke makhetlo a 3 (ho pholisa ka potlako> 1600 ℃)
Coefficient ea katoloso ea mocheso e tlase joalo ka 4.6×10⁻⁶/℃
Nanoscale coating - CVD deposition ea 6N-grade high-purity SiC (99.9999%)
▶ Ho thibela ho ata ha litšepe tse kang Fe le Ni
▶ Bokhopo bo holimo Ra <0.5μm
2. SiC wafer Boat - E lumellana le li-wafers tse 12-inch
- Moralo o nang le meroalo e mengata
▶ 100% e tsamaisanang le mocheso le li-tubes tsa sebōpi
Sekhahla sa litšila se ka tlase ho 0.01 ppb
3. Cantilever paddle system - isostatic graphite substrate + SiC coating
- Ho nepahala ha ho ikamahanya le maemo ± 0.1mm
▶ Bophelo ba ho hana ho hema > makhetlo a 100,000
Tšisinyeho ea phetiso e ka tlase ho 5μm
Lintlha-khōlō tsa thekenoloji tse sitisang
Phetohelo ea Bohloeki
Sistimi ea ts'ireletso ea mekhahlelo e 'meli
Lera la motheo ke 99.9% SiC → ho haha moralo oa matla a phahameng
CVD-SiC ea boemo ba 6N boemong bo sebetsang e etsa sebaka se tiisitsoeng sa boemo ba athomo.
thibelo
Taolo ea litšila: Na/K <0.1ppm, tšepe e boima <5ppb, e fihlelang litlhoko tsa lits'ebetso tse ka tlase ho 28nm
Molemo oa synergy oa tsamaiso
● Ho lumellana ha tšimo ea mocheso: Moralo oa makhetlo a mararo a ho kopanya mocheso oa sebōpi + sekepe sa wafer + paddle blade, phapang ea mocheso sebakeng sa mocheso o sa khaotseng (> 1200 ℃) ke ≤± 1.5℃
● Bophelo bo habeli: Tharollo eohle e eketsa nako ea bophelo ka 40% ha e bapisoa le tsamaiso e nyalisitsoeng, 'me MTBA e feta lihora tse 8,000.

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