Sekepe sa sephaphatha sa quartz se phahameng

Seketsoana se phahameng sa quartz safer se entsoe ka lehlabathe la maiketsetso la quartz ka mokhoa oa ho qhibiliha oa arc, o nang le coefficient e tlase haholo ea ho atolosoa ha mocheso le ho hanyetsa mocheso oa mocheso ho netefatsa hore ha ho na kotsi ea ho senyeha kapa ho phunyeha ha ho phahama ka potlako le ho oa. Bokaholimo bo bentšitsoe hantle ho fokotsa tšilafalo ea likaroloana, e loketseng tikoloho e thata le e hloekileng ha ho etsoa li-semiconductor. Sehlahisoa se tšehetsa boholo bo ikhethileng (bolelele ba 100-500mm, palo ea li-slots 2-24) 'me se ikamahanya le mefuta e sa tšoaneng ea liphaephe (4 "-12").

1. Litšobotsi tsa thepa ea mantlha

Mokhoa oa ho qhibiliha oa arc oa lehlabathe la maiketsetso la quartz

Ho sebelisa lehlabathe la quartz le hloekileng haholo (SiO₂ purity ≥99.999%), sebopeho sa khalase ea quartz ea amorphous se thehoa ke theknoloji ea ho qhibiliha ea arc. Ts'ebetso ena e felisa mefokolo ea moeli oa lijo-thollo, e ntlafatsa haholo ho tšoana ha lintho tse bonahalang, 'me e etsa bonnete ba hore li-waferboats li lula li tsitsitse mocheso o phahameng (≤1250 ° C).

Ultra low coefficient ea katoloso ea mocheso

Ntho ea ho atolosa mocheso e tlaase ho 5.5 × 10^-7K^-1(20-300 ° C), e lumella hoo e batlang e se phetoho ea boholo nakong ea ho phahama le ho theoha ha mocheso ka potlako (mohlala, 200 ° C / min ka mekhoa ea semiconductor), ho qoba li-microcracks kapa deformation ka lebaka la khatello ea mocheso.

Thermal shock resistance optimization

Ka ts'ebetso ea gradient annealing, phapang ea mocheso oa mocheso oa mocheso o ka fihla ho 1200℃→ mocheso oa kamore bakeng sa li-cycle tse fetang 100 ntle le ho phunyeha, ho finyella litlhoko tse tiileng tsa ho kenngoa ha ion, ho kenngoa ka potlako le mekhoa e meng.

2. Precision machining le kalafo holim'a metsi

Theknoloji ea ho polishing ea Nanoscale

Bophahamo ba holim'a metsi bo laoloa ho Ra≤0.2μm, 'me polishing ea lik'hemik'hale tsa lik'hemik'hale (CMP) e kopantsoeng le plasma etching e sebelisoa ho fokotsa ka mokhoa o atlehileng ho fokotsa likaroloana,' me bohloeki bo lumellana le maemo a SEMI F47 (nomoro ea likaroloana ≤10 /[imeile e sirelelitsoe]μm).

Thibelo e thibelang litšila (ho ikhethela)

Thepa ea silicon carbide kapa silicon nitride surface coat e ka etsoa ka mokhoa o ikhethileng ho fokotsa khohlano ea khokahanyo ea bokaholimo ba li-wafer (μ≤0.05), ho fokotsa kotsi ea mengoapo le ho falla ha ion ea tšepe.

Boitsebiso bo potlakileng:

1. Mabitso a mang: Seketsoana sa quartz, bracket ea wafer.

2. Kopo: Ho jara le ho fetisoa ka mokhoa o phahameng oa mocheso oa semiconductor wafer, o loketseng ho hasana, oxidation le mekhoa e meng.

3. Mekhahlelo ea mantlha: bohloeki ≥99.99%, mocheso o phahameng oa ho hanyetsa 1200 ℃, coefficient ea ho atolosa mocheso 5.5 × 10^-7/℃.

1. Ts'ebetso ea semiconductor wafer (sebōpi sa diffusion, sebōpi sa oxidation).

2. indasteri ea Photovoltaic silicon wafer processing.

3. Laboratori kereiti phahameng mocheso liteko sephaphatha behang.

Indasteri ea bohloeki e etellang pele, litaba tse sa hloekang tsa tšepe <1ppm.

Bophelo ba nako e telele ea tšebeletso (≥500 maqhubu a mocheso o phahameng).

Ts'ehetsa mokhoa o sa tloaelehang, potoloho e khuts'oane ea ho fana.