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SiC Ceramics
Silicon-Carbide-sebopi-tube
Silicon-Carbide-sebopi-tube

Silicon Carbide sebōpi tube


Sebaka sa Tšimoloho: China
Name Brand: Semixlab
Number Model: SCFT-01
tiiseletswe: ISO9001
Ntho e nyenyane ea litaelo: Setsi sa 1
Price: Ikopanye bakeng sa Khotheishene e Itlhophileng
Lintlha tsa ho Packa: Lebokose la Anti-Static + Plywood (O ka khonahala)
Nako ea thomello: Matsatsi a 60-90 Ka mor'a Tiisetso ea Taelo
Terms tefello: T / T
Phepelo Matla: 100 Units/Kgwedi
Tlhaloso

Semixlab e fana ka Ultra-high purity SiC furnace tube system, semiconductor-grade thermal field solutions ka 99.9999% coating purity le Complete line delivery.

Tlhahiso ea boleng ba mantlha

Fana ka tikoloho ea mocheso e se nang tšilafalo bakeng sa tlhahiso ea liphaphatha: 99.9% SiC bohloeki ba substrate + 99.9999% bohloeki ba CVD coating, e kopantsoeng le SiC cantilever paddle & wafer boat system, ho fihlela ts'ilafalo ea tšepe ea zero ka kamoreng ea ts'ebetso.

Mabitso a fapaneng a lihlahisoa:

Mocheso o phahameng oa SiC, tube ea silicon carbide;Tube ea SiC e hloekileng e phahameng;Tube ea Silicon carbide bakeng sa sebōpi sa sebopi; Silicon carbide tube bakeng sa ho hasana le ts'ebetso ea LPCVD;Tube ea SiC ea RTP, tube ea SiC bakeng sa oxidation

Litlhaloso tsa mantlha:

Bohloeki ba lintho tse bonahalang: Thepa ea motheo ke silicon carbide e nang le bohloeki bo fetang 99.9%, 'me ho hloeka ka mor'a ho roala ha CVD ho feta 99.9999% (6N grade).

Ts'ebetso ea mocheso: Mocheso o phahameng oa ho sebetsa 1650 ℃ (nako e telele), coefficient ea katoloso ea mocheso: 4.6 × 10⁻⁶/℃, ho tšoana sebakeng sa mocheso o sa khaotseng: ± 1.5℃ (1200℃);

Matla a mochini: Matla a ho kobeha 450Mpa (ka mocheso oa kamore).

songolo
Thepa ea 'mele ea Sintered Silicon Carbide
Property Boleng bo tloaelehileng
lik'hemik'hale Sebopeho SiC>99.9%
Tekanyo ea bongata >3.07 g/cm³
porosity e bonahalang
Modulus ea ho phatloha ho 20 ℃ 270 MPa
Modulus ea ho phatloha ho 1200 ℃ 290 MPa
Ho thatafala ho 20 ℃ 2400 Kg/mm²
Ho robeha ho thata ho 20% 3.3 MPa · m1/2
Thermal Conductivity ho 1200 ℃ 45 w/m .K
Katoloso ea mocheso ho 20-1200 ℃ 4.6 × 10-6/℃
Max.mocheso o sebetsang 1650 ℃ (nako e telele)
Ho hanyetsa mocheso oa mocheso ho 1200 ℃ Good
dikopo

Lisebelisoa tse ka sehloohong

Thermal field carrier

Theha sebaka sa mocheso se tsitsitseng le se ts'oanang ka har'a mefuta ea 1200 ℃ ho ea ho 1650 ℃ (phapang ea mocheso sebakeng sa mocheso o sa khaotseng ke ≤± 1.5 ℃)

Netefatsa maemo a thermodynamic a lits'ebetso tse joalo ka phallo, oxidation le annealing.

Tšilafalo ea ho itšehla thajana

Thibela ho ata ha li-ion tsa tšepe (tse kang Fe/Ni/Cu, joalo-joalo) ka thepa e hloekileng haholo (e kang SiC).

Thibela tšilafalo lipakeng tsa likhase tsa tšebetso le tikoloho e kantle.

Seteishene sa khase

Laola ka nepo tataiso ea phallo le kabo ea likhase tse arabelang (joalo ka O₂/N₂/SiH₄, jj.)

Finyella karabelo e ts'oanang ea khase sebakeng sa sephaphatha (joalo ka kholo ea SiO₂).

Ho roala ha photovoltaic: Tšehetsa TOPCon / HJT cell PECVD mokhoa oa ho tsamaisa lipalangoang.

Liketsahalo tsa kopo

● Epitaxy

● Oxidation / Diffusion

● mokhoa oa LPCVD/PECVD

● Ho kenngoa ha li-semiconductors tse kopantsoeng tsa III-V

Litharollo ho lintlha tse bohloko tsa indasteri

Litharollo tsa rona li sebetsana le lintlha tse bohloko tsa bareki ba rona:

1. Ho silafala ha likaroloana tsa mocheso o phahameng oa mocheso: 6N ea ho roala e thibela pula ea litšila.

Ho nkeloa sebaka khafetsa ha SiC likarolong tsa quartz ho eketsa ho hanyetsa kutu ka makhetlo a 8.

2. Moqapi oa ho lumellana ha CTE bakeng sa ho se lumellane ha katoloso ea mocheso ea likarolo tsa mocheso oa mocheso letotong lohle la lisebelisoa tsa SiC.

3. Ultra-bentšitsoe holim'a phekolo ea tšilafalo tšepe ka morao ea sephaphatha (Ra 0.2μm).

Molemo oa Khatello

Melemo ea mantlha ea likarolo tsa tekheniki ea likarolo:

1. SiC sebōpi tube - Base thepa bohloeki: 99.9% sintered silicon carbide

▶ Ho hanyetsa mocheso oa mocheso ho matlafatsoa ke makhetlo a 3 (ho pholisa ka potlako> 1600 ℃)

Coefficient ea katoloso ea mocheso e tlase joalo ka 4.6×10⁻⁶/℃

Nanoscale coating - CVD deposition ea 6N-grade high-purity SiC (99.9999%)

▶ Ho thibela ho ata ha litšepe tse kang Fe le Ni

▶ Bokhopo bo holimo Ra <0.5μm

2. SiC wafer Boat - E lumellana le li-wafers tse 12-inch

- Moralo o nang le meroalo e mengata

▶ 100% e tsamaisanang le mocheso le li-tubes tsa sebōpi

Sekhahla sa litšila se ka tlase ho 0.01 ppb

3. Cantilever paddle system - isostatic graphite substrate + SiC coating

- Ho nepahala ha ho ikamahanya le maemo ± 0.1mm

▶ Bophelo ba ho hana ho hema > makhetlo a 100,000

Tšisinyeho ea phetiso e ka tlase ho 5μm

Lintlha-khōlō tsa thekenoloji tse sitisang

Phetohelo ea Bohloeki

Sistimi ea ts'ireletso ea mekhahlelo e 'meli

Lera la motheo ke 99.9% SiC → ho haha ​​moralo oa matla a phahameng

CVD-SiC ea boemo ba 6N boemong bo sebetsang e etsa sebaka se tiisitsoeng sa boemo ba athomo.
thibelo

Taolo ea litšila: Na/K <0.1ppm, tšepe e boima <5ppb, e fihlelang litlhoko tsa lits'ebetso tse ka tlase ho 28nm

Molemo oa synergy oa tsamaiso

● Ho lumellana ha tšimo ea mocheso: Moralo oa makhetlo a mararo a ho kopanya mocheso oa sebōpi + sekepe sa wafer + paddle blade, phapang ea mocheso sebakeng sa mocheso o sa khaotseng (> 1200 ℃) ke ≤± 1.5℃

● Bophelo bo habeli: Tharollo eohle e eketsa nako ea bophelo ka 40% ha e bapisoa le tsamaiso e nyalisitsoeng, 'me MTBA e feta lihora tse 8,000.

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