EN 
EN
DA
NL
FI
FR
DE
IT
JA
KO
NO
PL
PT
RO
RU
ES
SV
TL
ID
SK
UK
VI
TH
TR
FA
BE
LA
UZ
SiC e koahetsoeng ka porous graphite disk bakeng sa Si epitaxy
SiC Coated Porous Graphite Disk e tsoang ho Semixlab Semiconductor e etselitsoe lisebelisoa tse tsoetseng pele tsa Si epitaxy, moo ho ts'oana ha mocheso le bohloeki ba ts'ebetso ho bohlokoa. E hahiloe ho tloha bohloeki bo phahameng ba isostatic porous graphite 'me e sirelelitsoe ke lesela le teteaneng la CVD SiC, disk e tiisa ts'ebetso e tsitsitseng ea mocheso o phahameng, phallo ea khase e ts'oanang, le ho hanyetsa ka mokhoa o ikhethang ho hydrogen le chlorine corrosion.
Tlhaloso
Semixlab's SiC coated porous graphite disk ke karolo e entsoeng ka nepo e etselitsoeng lits'ebetso tse tsoetseng pele tsa silicon epitaxy (Si epitaxial growth). Thepa ea motheo ke isostatic fine-grain porous graphite, e nang le conductivity e phahameng ea mocheso, botebo bo tlaase, le sebopeho se bulehileng sa pore. Bokaholimo bo koahetsoe ka lera le letenya, le phahameng-purity silicon carbide (SiC), e kentsoeng ka mouoane oa lik'hemik'hale (CVD). Koko ena e fana ka khanyetso e ikhethang ea ho bola, ho hlahisa likaroloana, le khoholeho ea lik'hemik'hale libakeng tsa haedrojene le chlorinated.
songolo
| Lintho tsa motheo tsa 'mele tsa CVD SiC coating | |
| Property | Boleng bo tloaelehileng |
| Sebopeho sa Crystal | FCC β phase polycrystalline, haholo-holo (111) e sekametseng |
| segokanyipalo | 3.21 g, / cm³ |
| thatafala | 2500 Vickers boima (moroalo oa 500g) |
| Boholo ba lijo-thollo | 2 ~ 10μm |
| K'hemik'hale e Hloekileng | 99.99995% |
| Mocheso bokgoni | 640 J·kg-1K-1 |
| Sublimation Mocheso | 2700 ° C |
| Matla a Flexural | 415 MPa RT 4-ntlha |
| Modulus e monyane | 430 Gpa 4pt kobeha, 1300 ℃ |
| Thermal Conductivity | 300Wm-1K-1 |
| Katoloso ea Thermal(CTE) | 4.5 × 10-6K-1 |
dikopo
Mosebetsi le Karolo ho Si Epitaxy Process
Litsing tsa sejoale-joale tsa Si epitaxial CVD reactor, taolo e nepahetseng ea ho tšoana ha mocheso le phallo ea phallo ea khase e bohlokoa bakeng sa ho fihlela likarolo tsa epitaxial tsa boleng bo holimo, tse se nang sekoli. SiC e koahetsoeng ka porous graphite disk e behiloe ka mokhoa o hlophisitsoeng ka tlas'a susceptor kapa e le karolo ea kopano ea khase ea khase ho etsa mesebetsi e latelang:
1. Ho lekana ha Phallo ea Khase
Sebopeho sa porous se sebetsa e le sephalli sa khase, se netefatsang phallo e tšoanang ea laminar ea likhase tse sebetsang (mohlala, SiHCl₃, H₂, HCl) ho pholletsa le bokaholimo. Sena se thusa ho felisa moferefere oa phallo le ho boloka litekanyetso tse tsitsitseng tsa ho behoa ho pholletsa le li-diameter tse kholo tsa wafer (6-8 inches).
2. Thermal Field Uniformity
Ka conductivity e phahameng ea mocheso le moralo o hlophisitsoeng oa pore, disk e aba mocheso ka ho lekana, ho fokotsa mocheso oa mahlaseli a mahlaseli. Ponahalo ea infrared ea SiC coating e ntlafatsa tšebeliso ea matla le ho tsitsisa mocheso oa wafer ka har'a ± 1°C.
3. Corrosion le Taolo ea Particle
Sekhahla sa SiC se sebetsa e le tšitiso e sireletsang, e thibelang oxidation ea graphite, hydrogen etching, le carbon outgassing. Sena se tiisa maemo a hloekileng haholo, ho fokotsa mefokolo e bakoang ke likaroloana sebakeng sa epitaxial.
4. Ho Tšepahala Nako e telele
Motsoako oa porous graphite le SiC coating e fana ka 3-5 × nako e telele ea bophelo ho feta likarolo tse sa koaeloang tsa graphite, ho fokotsa nako ea ho theoha le nako ea tlhokomelo.
Semixlab e sebetsa ka ho khetheha ka likarolo tse tsoetseng pele tsa SiC tse koahetsoeng ka graphite bakeng sa kholo ea epitaxial, ts'ebetso ea mocheso, le litsamaiso tsa kholo ea kristale. Theknoloji ea rona ea ho roala ka tlung e tiisa likarolo tsa SiC tse teteaneng, tse ts'oanang, le tse hloekileng haholo tse eketsang karolo ea bophelo bohle le ho boloka bohloeki bo ikhethang tlas'a maemo a boima a tshebetso. Meralo e ikhethileng e fumaneha ho ipapisitsoe le tlhophiso ea reactor ea hau, litlhoko tsa boholo ba pore, le sebaka sa mocheso. Re lebeletse ka thabo lipotso tsa hau tse ling.
Services Our
Lebenkele la Lihlahisoa tsa Semixlab
