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SiC e koahetsoeng ka sephaphatha susceptor
Boitsebiso bo potlakileng:
Morero: E etselitsoe ka ho khetheha bakeng sa semiconductor CVD (1000 ° C - 1400 ° C) le mekhoa ea mocheso o phahameng oa PVD, e fana ka sethala se tsitsitseng sa tšehetso bakeng sa li-wafers.
Mekhahlelo ea mantlha: Bokhopo ba sefahleho Ra <0.5 μm; boima bo phahameng (> 2500 HV); coefficient of thermal expansion (CTE) e tsamaisana hantle (≈ 2.6 x 10⁻⁶/K), e felisa ka ho feletseng warpage ea wafer kapa slip e bakoang ke khatello ea mocheso.
Tlhaloso
Semixlab e fana ka li-wafer susceptor tse sebetsang hantle. Sehlahisoa sena se sebelisoa haholo ho lisebelisoa tsa semiconductor CVD PVD ho fana ka ts'ehetso bakeng sa li-wafers le ho thibela tšenyo leha e le efe le marotholi a kotsi a bakoang ke phallo ea naetrojene.
SiC Coated silicon carbide base (SiC coated Susceptor) e sebelisoa haholo ho li-semiconductors ka lebaka la likarolo tsa eona tse kang ho hanyetsa mocheso o phahameng, ho hanyetsa kutu, bohloeki bo phahameng le tšilafalo e fokolang ho li-wafers.
e sebetsa joang:
E etselitsoe ka ho khetheha bakeng sa semiconductor CVD (1000 ° C - 1400 ° C) le mekhoa ea mocheso o phahameng oa PVD, e fana ka sethaleng se tsitsitseng sa tšehetso bakeng sa li-wafers.
Litšobotsi:
Botsitso bo ikhethang ba mocheso o phahameng: E mamella mocheso o feteletseng ho feta 1400 ° C, e netefatsa boemo bo nepahetseng ba wafer ntle le ho kheloha.
Tšireletso e matla haholo: Hanela ka katleho tšusumetso ea phallo ea naetrojene> 10 m/s le marotholi a sa lebelloang, ho fana ka tšireletso e phahameng bakeng sa sephaphatha.
Ho tšoarella ho ikhethang: Thepa ea SiC e fana ka boima bo phahameng (> 2500 HV) le ho hanyetsa kutu, ho lelefatsa bophelo ba ts'ebeletso.
Sebaka se phahameng sa bohloeki: Bokhopo bo holimo Ra <0.5 μm, ho fokotsa kotsi ea tšilafalo ea likaroloana.
Motheo oa silicon (Silicon Susceptor)
Kopo: E loketse lits'ebetso tse phahameng tsa mocheso oa li-wafers tsa silicon tse nang le litlhoko tse phahameng haholo bakeng sa ho lumellana le mocheso (joalo ka kholo ea epitaxial, <1200 ° C).
Litšobotsi:
● Ho lumellana ka mokhoa o phethahetseng oa mocheso: Ho lumellana le thepa ea sephaphatha (silicon ea monocrystalline), coefficient of thermal expansion (CTE) e lumellana hantle (≈ 2.6 x 10⁻⁶/K), e felisa ka ho feletseng warpage ea wafer kapa slip e bakoang ke khatello ea mocheso.
● Ho fana ka potlako: Potoloho ea lihlahisoa tse tloaelehileng e khutsufatsoa haholo, e le tlase ho libeke tsa 4-6 (ha e bapisoa le libeke tsa 8-12 bakeng sa li-bases tsa SiC).
● Bohloeki bo phahameng: E finyella litekanyetso tsa lisebelisoa tsa silicon tsa semiconductor-grade.
● Boleng ba holim'a metsi: Ho hloekisoa ka mokhoa o nepahetseng, ho thata ka holim'a metsi Ra <0.2 μm.
songolo
| Lintho tsa motheo tsa 'mele tsa CVD SiC coating | |
| Property | Boleng bo tloaelehileng |
| Sebopeho sa Crystal | FCC β phase polycrystalline, haholo-holo (111) e sekametseng |
| segokanyipalo | 3.21 g, / cm³ |
| thatafala | 2500 Vickers boima (moroalo oa 500g) |
| Boholo ba lijo-thollo | 2 ~ 10μm |
| K'hemik'hale e Hloekileng | 99.99995% |
| Mocheso bokgoni | 640 J·kg-1·K-1 |
| Sublimation Mocheso | 2700 ° C |
| Matla a Flexural | 415 MPa RT 4-ntlha |
| Modulus ea Bacha | 430 Gpa 4pt kobeha, 1300 ℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Katoloso ea Thermal(CTE) | 4.5 × 10-6K-1 |
dikopo
SiC epitaxial layer kgolo ya graphite susceptor.
Phapanyetsano ea khase ea khase le taolo ea tšimo ea mocheso ho SiC epitaxial growth sebōpi.
Lebenkele la Lihlahisoa tsa Semixlab
