Sekoahelo sa CVD SiC
CVD SiC Coating Baffle e tsoang ho Semixlab ke karolo ea reactor ea ka hare e sebetsang hantle e etselitsoeng lits'ebetso tse tsoetseng pele tsa heteroepitaxy ea semiconductor. E entsoe bakeng sa litsamaiso tsa epitaxy tsa semiconductor tse kopaneng tsa GaN, SiC, le metsoako, baffle ena e koahetsoeng ke SiC e ntlafatsa kabo ea phallo ea khase, e tsitsisa masimo a mocheso, 'me e fokotsa tlhahiso ea likaroloana ka har'a li-reactor tsa MOCVD le CVD. Bokaholimo ba eona bo teteaneng, bo se nang masoba ba SiC bo hanela khoholeho ea lik'hemik'hale tse mabifi tsa pele ho moo, bo atolosa haholo nako ea bophelo ba likarolo le ho fokotsa makhetlo a tlhokomelo. Re amohela potso ea hau.
Tlhaloso
Tlhahisong e tsoetseng pele ea semiconductor, botsitso ba ts'ebetso ka har'a li-reactor tsa epitaxial bo khetholla ka kotloloho ts'ebetso ea sesebelisoa, chai, le ts'epo ea nako e telele. CVD SiC Coating Baffle ea Semixlab ke karolo ea kamore e sebetsang hantle e entsoeng bakeng sa libaka tse batlang kholo ea heteroepitaxial, ho kenyeletsoa le silicon (Si), silicon carbide (SiC), le lits'ebetso tsa semiconductor tse kopaneng. Ho kopanya moralo o nepahetseng oa sebopeho le theknoloji ea ho roala ea silicon carbide ea chemical-purity (CVD), sehlahisoa sena se fana ka taolo e ikhethang ea phallo ea khase, taolo ea likaroloana, le botsitso ba tšimo ea mocheso bakeng sa liforomo tsa epitaxial tsa moloko o latelang.
Ka hare ho li-reactor tsa epitaxial, haholo-holo ho li-reactor tsa MOCVD kapa CVD tse sebetsang kaholimo ho 1000°C le lits'ebetsong tsa epitaxy tsa SiC tse fetang 1600°C, matla a khase a ka hare le ho tšoana ha mocheso li susumetsa ka matla taolo ea botenya ba lera, botsitso ba kabo ea dopant, le bongata ba sekoli sa kristale. Li-baffle tse koahetsoeng ke CVD SiC li sebetsa e le taolo ea bohlokoa ea phallo le likarolo tse sireletsang ka hare ho likamore tsa ts'ebetso. Li bopa bocha le ho tsitsisa phallo ea khase ea ts'ebetso, li fokotsa pherekano haufi le mathōko a wafer, 'me li khothalletsa kabo e tšoanang ea precursor ho pholletsa le li-substrate tse bophara bo boholo.
Ka nqane ho taolo ya phallo, ho hatella tlhahiso ya dikarolwana ke ntho ya bohlokwa ho fihlelleng tlhahiso e phahameng ya epitaxial. Ho taboha, mapetso a manyane, le tshilafatso e tswang dinthong tse tlwaelehileng tsa kamore di hlahisa dikarolwana tsa submicron tse senyang tshebetso ya sesebediswa haholo. Di-baffle tse kwahetsweng ke CVD SiC tsa Semixlab di sebedisa CVD SiC e hlwekileng haholo, e fanang ka bongata bo ikgethang, ho thatafala, le ho se sebetse hantle ha dikhemikhale. Seaparo sena se etsa bokahodimo bo matla, bo se nang masoba bo hanelang kgoholeho ya dikhase tse senyang tsa tshebetso (HCl, Cl₂, le di-derivatives tsa silane) ha bo ntse bo mamella potoloho ya mocheso e pheta-phetoang ntle le ho senyeha ha sebopeho. Sena se fokotsa haholo tlhahiso ya dikarolwana mme se ntlafatsa nako ya tshebetso ya disebediswa ka kakaretso.
Taolo ea mocheso e emela mosebetsi o mong oa bohlokoa oa CVD SiC Coating Baffles ka har'a litsamaiso tsa epitaxial. CVD silicon carbide's high thermal coefficient and low coefficient of thermal expansion (CTE) e nolofalletsa kabo ea mocheso e ts'oanang ka har'a kamore. Nakong ea lits'ebetso tsa kholo ea mocheso o phahameng, li-baffle li sebetsa e le li-thermal stabilizers, li fokotsa maemo a mocheso a sebakeng seo a ka bakang liphetoho tsa sekhahla sa kholo kapa ho kenngoa ha dopant.

Semixlab e kenya tshebetsong maemo a thata a taolo ya boleng ho pholletsa le kgetho ya thepa, ho bewa ha CVD coating, ho nepahala ha machining, le tlhahlobo ya ho qetela ho netefatsa botenya bo tsitsitseng ba coating, ho kgomarela, bohlweki le botsitso ba boholo. Semixlab e ntse e ikemiseditse ho fana ka tshehetso e tswetseng pele ya botekgeniki le ditharollo tsa dihlahiswa tse ikgethileng bakeng sa ditshebetso tsa semiconductor epitaxial. Re labalabela ka tieo ho ba molekane wa hao wa nako e telele Chaena.
songolo
| Lintho tsa motheo tsa 'mele tsa CVD SiC coating | |
| Property | Boleng bo tloaelehileng |
| Sebopeho sa Crystal | FCC β phase polycrystalline, haholo-holo (111) e sekametseng |
| segokanyipalo | 3.21 g, / cm³ |
| thatafala | 2500 Vickers boima (moroalo oa 500g) |
| Boholo ba lijo-thollo | 2 ~ 10μm |
| K'hemik'hale e Hloekileng | 99.99995% |
| Mocheso bokgoni | 640 J·kg-1·K-1 |
| Sublimation Mocheso | 2700 ° C |
| Matla a Flexural | 415 MPa RT 4-ntlha |
| Modulus e monyane | 430 Gpa 4pt kobeha, 1300 ℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Katoloso ea Thermal(CTE) | 4.5 × 10-6K-1 |
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