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Sesebelisoa sa CVD SiC se le seng
| Sebaka sa Tšimoloho: | China |
| Name Brand: | Semixlab |
| Number Model: | 6SGWS-01 |
| tiiseletswe: | ISO9001 |
| Ntho e nyenyane ea litaelo: | 1 sete |
| Price: | Ikopanye bakeng sa Khotheishene e Itlhophileng |
| Lintlha tsa ho Packa: | Sephutheloana se tloaelehileng sa kantle ho naha |
| Nako ea thomello: | Nako ea Phano: Matsatsi a 45-60 Ka mor'a Tiisetso ea Order |
| Terms tefello: | T / T |
| Phepelo Matla: | 400 lihlopha / Khoeli |
Tlhaloso
Maemo a kopo kapa lisebelisoa: Lisebelisoa tsa AMTA epitaxial
Bohloeki bo phahameng ka ho fetisisa (≤100ppb, ICP-E10 e tiisitsoeng) le botsitso bo ikhethang ba mocheso / lik'hemik'hale bakeng sa khōlo e thibelang tšilafalo ea GaN, SiC, le li-epi-layers tse thehiloeng ka silicon. E entsoe ka theknoloji e nepahetseng ea CVD, e ts'ehetsa li-wafers tse 6"/8"/12", e netefatsa khatello e tlase ea mocheso, 'me e mamella mocheso o feteletseng ho fihla ho 1600 ° C.
Matla a Khamphani
Semixlab Technology Co., Ltd e na le litsi tse 2 tsa R&D, metheo ea tlhahiso ea 2, mela ea tlhahiso ea 12, basebetsi ba 150+, le litlaleho tsa matsete a R&D ho feta 30%. Sebopeho sa sehlahisoa sa rona se sebelisoa haholo-holo ho LED, potoloho e kopantsoeng ea IC, semiconductor ea moloko oa boraro, photovoltaic le liindasteri tse ling. Semixlab e na le R&D e matla, tlhahiso le liteko tse kopaneng le bokhoni ba ho netefatsa. Ka nako e ts'oanang, re lula re ntlafatsa theknoloji le lisebelisoa tsa rona ka matsete a limilione tse mashome ka selemo.
songolo
CVD SiC single wafer susceptor e sebelisoa haholo ho lisebelisoa tsa silicon epitaxy, thepa e romelloa kantle ho naha ea graphite + CVD SiC coating.
Litekanyetso tsa lintlha tsa mantlha: ho roala ha silicon carbide le lisebelisoa tsa graphite:
| Lintho tsa 'mele tsa graphite ea isostatic | ||
| Property | Unit | Boleng bo tloaelehileng |
| Tekanyo ea bongata | g / cm³ | 1.83 |
| thatafala | H.S.D. | 58 |
| Phalliso ea Motlakase | μΩ.m | 10 |
| Matla a Flexural | MPa | 47 |
| Compressive Matla | MPa | 103 |
| Matla a tšepe | MPa | 31 |
| Modulus e monyane | GPA | 11.8 |
| Katoloso ea Thermal(CTE) | 10-6K-1 | 4.6 |
| Thermal Conductivity | W`m-1`K-1 | 130 |
| Karolelano ea Boima ba Thollo | μm | 8-10 |
| Kutloelo-bohloko | % | 10 |
| Litaba tsa Ash | ppm | ≤5 (kamora ho hloekisoa) |
| Lintho tsa motheo tsa 'mele tsa CVD SiC coating | |
| Property | Boleng bo tloaelehileng |
| Sebopeho sa Crystal | FCC β phase polycrystalline, haholo-holo (111) e sekametseng |
| segokanyipalo | 3.21 g, / cm³ |
| thatafala | 2500 Vickers boima (moroalo oa 500g) |
| Boholo ba lijo-thollo | 2 ~ 10μm |
| K'hemik'hale e Hloekileng | 99.99995% |
| Mocheso bokgoni | 640 J`kg-1`K-1 |
| Sublimation Mocheso | 2700 ° C |
| Matla a Flexural | 415 MPa RT 4-ntlha |
| Modulus e monyane | 430 Gpa 4pt kobeha, 1300 ℃ |
| Thermal Conductivity | 300W`m-1`K-1 |
| Katoloso ea Thermal(CTE) | 4.5×10-6K-1 |
dikopo
Mekhoa e meholo:
Joalo ka sesebelisoa ho lisebelisoa tsa epitaxy tsa AMTA, re ka fana ka 6inch 8inch 12inch wafer susceptor.
CVD SiC single wafer susceptor ho lisebelisoa tsa AMTA epitaxy:
1. Wafer tshehetso le mogote tšimo homogenization
E le ts'ebetso ea mantlha ea CVD SiC single wafer susceptor in AMTA epitaxy equipment In MOCVD, CVD le lisebelisoa tse ling tsa epitaxy, susceptor e sebetsa e le sejari sa liphaphatha, 'me ka mokhoa o ts'oanang o fetisetsa mocheso holim'a sephaphatha ka ho futhumatsa kapa ho futhumatsa RF ho netefatsa kholo e tšoanang ea likarolo tsa epitaxial (mohlala, GaN, SiC).
Sebopeho sa eona se phahameng sa mocheso oa mocheso se fokotsa mocheso oa mocheso pakeng tsa moeli le bohareng, ho laola ho tšoana ha mocheso ka hare ho ± 1 ° C le ho qoba liphoso tsa khatello ea lintho tse bonahalang.
2. Thibelo ea Tšilafalo ea Lik'hemik'hale
Li-substrates tsa graphite tse pepesehileng ka ho toba likhase tse sebetsang li atisa ho oxidize ho etsa CO₂ kapa phofo, ho silafatsa kamore ea karabelo. Ho roala ha CVD SiC ho sebetsa e le lera le sireletsang ho arola graphite ho likhase tse senyang le ho fokotsa tšilafalo ea likaroloana holim'a metsi.
Ka mohlala, ts'ebetsong ea GaN epitaxy, ho roala ho ka hanela ka katleho ho khoholeha ha li-precursors tse kang NH₃ le TMGa, le ho tiisa bohloeki ba filimi.
3. Ho ikamahanya le mekhoa e fapaneng ea epitaxial
Li-semiconductors tsa moloko oa boraro: bakeng sa SiC kapa GaN epitaxy ho li-substrates tsa SiC, ho finyella litlhoko tsa lisebelisoa tse matla haholo bakeng sa lifilimi tse teteaneng le litekanyetso tse fokolang tsa bokooa.
Tlhahiso ea Micro-LED: ho ts'ehetsa maemo a holimo ka nepo le taolo ea mocheso oa li-wafers tse boholo bo nyane (mohlala, lisenthimithara tse 8), le ho fokotsa ho hasana ha maqhubu a maqhubu.
Molemo oa Khatello
Litšobotsi tsa lintho tse bonahalang: ts'ebetso e ntle ea CVD SiC
1. Bohloeki bo phahameng haholo le sebopeho se teteaneng
Thepa ea silicon carbide (SiC), e kentsoeng ka mouoane oa lik'hemik'hale (CVD), e finyella maemo a litšila a ≤100ppb (E10 standard) joalokaha ho netefalitsoe ke ICP-MS (Inductively Coupled Plasma Mass Spectrometry). Bohloeki bona bo phahameng haholo bo fokotsa likotsi tsa tšoaetso nakong ea kholo ea epitaxial, ho netefatsa boleng bo holimo ba kristale bakeng sa lits'ebetso tsa bohlokoa tse kang gallium nitride (GaN) le tlhahiso ea silicon carbide (SiC) e pharaletseng-bandgap semiconductor.
Mohaho oa ho roala o teteane ebile o ts'oana, o na le boima bo tlase ba bokaholimo, bo fokotsang kotsi ea ho phatloha ha likaroloana le ho fihlela litlhoko tse phahameng tsa likamore tse hloekileng tsa semiconductor.
2. Khanyetso e feteletseng ea tikoloho
Ho hanyetsa mocheso o phahameng: E ka boloka botsitso ba physicochemical ho 1600 ° C, e leng e phahameng haholo ho feta moeli oa oxidization oa graphite substrate (e ka bang 400 ° C), e lelefatsa haholo bophelo ba eona ba tšebeletso.
Corrosion Resistance: E hanyetsana haholo le likhase tse senyang tse kang Cl₂, H₂ le khoholeho ea plasma, e loketseng MOCVD, MBE le libaka tse ling tse thata tsa ts'ebetso.
3. Ts'ebetso e ntle ea mocheso
Thermal conductivity e ka holimo ho 300 W/mK e etsa bonnete ba hore li-wafers li futhumatsoa ka mokhoa o ts'oanang, ho fokotsa ho kheloha ha epitaxial layer (mohlala, mathata a ho fetoha ha maqhubu), le ho ntlafatsa tlhahiso ea li-LED, lisebelisoa tsa motlakase le lihlahisoa tse ling.
Coefficient ea ho atolosoa ha mocheso (4 × 10-⁶ / K) e haufi le ea graphite substrate, e qobang ho phunyeha kapa ho senya seaparo ka lebaka la phetoho ea mocheso.
4. Matla a mochine le ho tšoarella
Matla a Flexural ho fihlela ho 470 MPa, a khona ho mamella libaesekele tse phahameng-mocheso-mocheso o tlaase-mocheso le khatello ea mochine, ho fokotsa khafetsa ea tlhokomelo.
Hajoale, bohloeki ba rona ba silicon carbide ba ka fihla ho E10 tekong ea ICP, e ka bang 100 ppb, 'me boemo bona ba bohloeki bo har'a boemo bo holimo Chaena.
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