selikalikoe sa TaC se porous

Silicon carbide (SiC), thepa ea semiconductor ea moloko oa boraro, e na le thepa e ikhethang e kang bandgap e phahameng, conductivity e phahameng ea mocheso, le tšimo ea motlakase e senyehang, e leng se etsang hore e be ea bohlokoa masimong a kang likoloi tse ncha tsa matla, lipalangoang tsa terene, puisano ea 5G le lisebelisoa tsa motlakase. Ho hola ha likristale tse le 'ngoe tsa SiC ho hloka mocheso o phahameng haholo (> 2000 ° C) le tikoloho e thata ea 'mele le ea lik'hemik'hale, e behang litlhoko tse phahameng haholo ho likarolo tsa bohlokoa tsa lisebelisoa tsa kholo, joalo ka li-crucibles le likarolo tsa tšimo ea mocheso. Semixlab e fana ka mehele ea Porous tantalum carbide (TaC), e nang le thepa ea eona e ikhethang ea 'mele le ea lik'hemik'hale, e fetohile lisebelisoa tse ntle bakeng sa ho ntlafatsa ts'ebetso ea kholo ea SiC single crystals.

Litšobotsi tsa mantlha tsa mehele ea porous tantalum carbide

1. Ho tsitsisa mocheso o phahameng

Tantalum carbide melting point ho fihla ho 3880 ℃, ka har'a silicon carbide single kristale mocheso range (2000-2500 ℃) ho boloka botsitso ba sebopeho, ho qoba deformation kapa volatilization.

Coefficient e tlase ea ho atolosa mocheso (6.3×10⁻⁶/K), e fokotsang kotsi ea mapetsong a bakoang ke khatello ea mocheso.

2. Ho se sebetse ha lik'hemik'hale

E na le matla a ho lumellana le silicon carbide, graphite le lisebelisoa tse ling, 'me ha e sebetsane le silicon (Si) le carbon (C) mouoane ka mocheso o phahameng ho qoba ho silafatsa likristale.Ho hanyetsa kutu e ntle ho silicon / carbon gases.

Boitsebiso bo potlakileng:

1. Mabitso a mang: selikalikoe sa TaC, Porous Tantalum carbide, selikalikoe se koahetsoeng ke TaC

2. Kopo: E le karolo ea mantlha ea tsamaiso ea mocheso oa mocheso, lesale la TaC le nang le porous le laola ho tsamaisoa ha mahlaseli a mocheso ka sebopeho sa eona sa porous, ho fokotsa mocheso oa mocheso oa mahlaseli, 'me ho ntlafatsa ho tšoana ha axial ea silicon carbide single crystal.Ho kopantsoe le heater ea graphite, mefokolo ea khatello ea kristale e bakoang ke ho chesa ho feta moo e ka fokotseha.

3. Core parameters:Tantalum carbide melting point ho fihlela ho 3880 ℃, ka silicon carbide single crystal growth range of temperature range (2000-2500℃) ho boloka botsitso ba sebopeho, ho qoba deformation kapa volatilization.

Coefficient e tlase ea ho atolosa mocheso (6.3×10⁻⁶/K), e fokotsang kotsi ea mapetsong a bakoang ke khatello ea mocheso.

Sesebelisoa sa bohlokoa kholong ea silicon carbide single crystal

1. Moqapi oa tšimo ea mocheso le taolo ea mocheso

Joalo ka karolo ea mantlha ea sistimi ea tšimo ea mocheso, selikalikoe sa TaC se porous se laola phepelo ea mahlaseli a mocheso ka sebopeho sa eona sa porous, se fokotsa mocheso oa mocheso oa radial, 'me se ntlafatsa ho tšoana ha axial ea kristale.

Ho kopantsoe le mocheso oa graphite, mefokolo ea khatello ea kristale e bakoang ke ho futhumala ha sebaka seo ho ka fokotseha.

2. Lipalangoang tsa khase le ho ntlafatsa karabelo

Ka sebōping sa kholo sa PVT, mehele ea TaC e nang le porous e ka sebelisoa e le sebaka sa phallo ea khase ho tsamaisa mouoane oa Si/C ka mokhoa o lekanang holim'a kristale ea peo, e ka ntlafatsang sekhahla sa kholo ea kristale le boleng ba kristale.

Sebopeho sa pore se ka khahlisa litšila (tse kang li-ion tsa tšepe) le ho ntlafatsa bohloeki ba kristale (resistivity>10⁵ Ω·cm).

3. Kopano ea tšehetso ea bophelo bo bolelele

Ho e-na le lisebelisoa tse tloaelehileng tsa graphite, e sebelisoa bakeng sa mehele ea tšehetso ea crucible kapa likarolo tsa mocheso oa mocheso ho qoba bothata ba phofo ea graphite ka mocheso o phahameng le ho lelefatsa bophelo ba tšebeletso ea thepa (> lihora tse 1000).

Sebopeho sa porous se imolla khatello ea kelello ea mocheso le ho fokotsa kotsi ea ho senya.

Ring ea TaC e sebelisoa haholo mokhoeng oa PVT

Ka kakaretso, Semixlab's Porous TaC Ring e ntlafatsa boleng ba kristale: sebaka sa mocheso o ts'oanang se fokotsa sekoli mme se ts'ehetsa ho lokisoa ha likristale tse kholo tsa SiC tsa lisenthimithara tse 6 ho ea holimo.

Ntlafatso ea ts'ebetso ea ts'ebetso: Potlakisa katleho ea phetisetso ea khase le ho eketsa sekhahla sa kholo ka 10-15%.

Fokotsa litšenyehelo tsa tlhahiso: Likarolo tsa nako e telele li fokotsa makhetlo a mangata a tlhokomelo ea lisebelisoa, 'me litšenyehelo tsa kakaretso li fokotsehile ka 20-30%.

Melemo ea sebopeho sa porous

Porosity e laolehang (30-60%) e ntlafatsa tsela ea phallo ea khase 'me e khothalletsa lipalangoang tsa mouoane oa Si / C ho PVT (mokhoa oa ho tsamaisa mouoane oa 'mele).

Sebaka se phahameng se khethehileng se ntlafatsa bokhoni ba mahlaseli a mocheso, se thusa ho theha mocheso o ts'oanang oa mocheso, le ho thibela mefokolo ea kristale (e kang li-microtubules le dislocations).