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CVD Silicon Carbide (SiC) Coating
Likarolo tse koahetsoeng ka halofo ea khoeli tsa SiC
Likarolo tse koahetsoeng ka halofo ea khoeli tsa SiC

Likarolo tse koahetsoeng ka halofo ea khoeli tsa SiC


Likarolo tsa LPE Half Moon ke likarolo tsa reactor tse entsoeng ka nepo tse etselitsoeng tikoloho ea semiconductor epitaxy ea mocheso o phahameng. Li entsoe ka graphite e hloekileng haholo ea isostatic 'me li sirelelitsoe ke sekoahelo se teteaneng sa SiC, likarolo tsena li bapala karolo ea bohlokoa ho ntlafatseng kabo ea tšimo ea mocheso, ho tsitsisa matla a phallo ea khase, le ho fokotsa tšilafalo ea likaroloana ka har'a litsamaiso tsa epitaxy tsa LPE, CVD, le MOCVD. Geometry ea tsona ea half-moon e ntlafalitsoe ka ho khetheha ho ntlafatsa ho tšoana ha ts'ebetso, ho fokotsa litlamorao tsa bohale, le ho ntlafatsa boleng ba lera la epitaxial bakeng sa lits'ebetso tse hlokang thuso tse kenyeletsang lisebelisoa tsa Si, SiC, le GaN. Re labalabela ho fumana lipotso tsa hau tse ling.

Tlhaloso

Likarolo tsena tse koahetsoeng ka halofo ea khoeli tse koahetsoeng ke SiC ha e le hantle ke likarolo tsa graphite tse nepahetseng tse sebelisoang ho epitaxy ea SiC e mochesong o phahameng. Hang ha li kentsoe ka har'a sebaka se chesang sa reactor, li thusa ho boloka kamore e tsitsitse, ho boloka botsitso ba mocheso, le ho tšehetsa phallo e tsitsitseng ea khase nakong ea tlhahiso e telele.

Li entsoe ka graphite e hloekileng haholo e nang le sekoahelo se teteaneng sa CVD SiC holimo. Haeba u sebelisa sethala sa reactor se lumellanang le litsamaiso tsa epitaxy tsa mofuta oa LPE SpA, likarolo tsena li ka sebetsa e le tse nkeloang sebaka ka kotloloho kapa tsa fetoloa ha ho hlokahala.

Setšoantšo sa Schematic sa Likarolo tse koahetsoeng ke SiC tse Half-Moon

Features senotlolo

-High-bohloeki isostatic graphite substrate

-Sekoahelo se sireletsang sa CVD SiC se teteaneng

-Khanyetso e ntle khahlanong le ho thothomela ha mocheso

-Tlhahiso ea likaroloana tse tlase e sebetsa

-Sekoahelo se lula hantle

- E sebetsa hantle bakeng sa epitaxy ea potoloho e telele

Setšoantšo sa likarolo tse tšekaletseng tsa LPE Half Moon Components

Re fana ka eng?

Re etsa likarolo tse 'maloa tsa reactor tse lumellanang le meaho ea kamore ea setaele sa LPE:

Likarolo tse halofo ea khoeli

-Likoahelo tsa tšireletso

-Likarolo tsa tataiso ea phallo

-Likarolo tsa tšehetso tsa Wafer

-Mehele e sireletsang

Likopano tsa graphite tse ikhethileng

difeme

Karolo ka 'ngoe e qala ka ho etsoa ka nepo ho tsoa mefuteng e khethiloeng ea graphite, ebe e manehoa ka CVD SiC, 'me qetellong e hlahlojoa litekanyo. Re laola botenya ba ho koahela, boemo ba bokaholimo, le litekanyo tsa bohlokoa ho netefatsa ts'ebetso e tsitsitseng maemong a tlhahiso ea semiconductor.

Tšebeletso ea Tloaelo

Re ka thusa ka:

-OEM tlhahiso ea sebaka

-Ho iketsetsa lintho ho latela litšoantšo tsa hau

-Boenjiniere bo fapaneng ho tsoa disampoleng

Tšehetso ea tlhahiso ea sehlopha

songolo

Mekhoa e Tloaelehileng ea Tekheniki

paramethara Boleng bo tloaelehileng
Boitsebiso ba Base Graphite e sa fetoheng e hloekileng haholo
barbotage CVD SiC
Ho koahela Bohloeki > 99.99999%
Botenya (Graphite) 1.75 - 1.90 g/cm³
bueloang Mocheso ho fihlela ho 2000°C+
Ho roala botenya 50 – 200 μm (e ka fetoloa)
Bokhopo ba Sefahleho (Ra) E laoloa ka kopo
Matla a ho khomarela Ha ho delamination tlas'a mocheso oa libaesekele
Khanyetso ea Lik'hemik'hale E tsitsitse ka har'a likhase tse nang le H₂, Si
dikopo

Likarolo tsena li sebelisoa haholo ho:

-Li-reactor tsa SiC epitaxy

-Sesebelisoa sa CVD sa semiconductor

-Mekhoa ea kholo ea kristale e nang le mocheso o phahameng

Li loketse haholo li-platform tsa reactor tse lumellanang le lisebelisoa tsa LPE SpA epitaxy.

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