MOCVD SiC Coated Graphite Susceptor

1. Bophelo bo atolosoa ka 300%+

Theknoloji ea "buffer layer" e nolofalletsa palo ea lipotoloho tsa mocheso oa mocheso ho feta makhetlo a 5,000 (ka tlase ho makhetlo a 1,500 bakeng sa lihlahisoa tse tloaelehileng).

Mocheso o tsoelang pele oa ts'ebetso o ka fihla ho 1650 ° C, 'me ho roala ha ho bontše ho phunyeha kapa ho senya.

2. Tiisetso ea tšilafalo ea zero

Bohloeki ba ho roala ha SiC ke sehlopha sa 6N (kakaretso ea litšila tsa tšepe <0.5ppm).

E fetisitse teko ea ho lokolloa ha likaroloana tse tloaelehileng tsa SEMI (Bohloeki ba Sehlopha sa 10).

3. Ho ntlafatsa ho tšoana ha tšimo ea mocheso

Phapang ea mocheso holim'a setsi sa motheo e ka tlaase ho ± 2 ° C (lintlha tse lekantsoeng bakeng sa tlhaloso ea Φ300mm).

E tšehetsa mocheso o potlakileng (20 ° C / s) ntle le ho senyeha ha mocheso.

4. Excellent corrosion resistance

E hanyetsana le ho bola ke likhase tse kang H2, NH3, le TMAl, ka bophelo ba tšebeletso ea likhoeli tse fetang 18.

Sekhahla sa phetoho ea mahoashe a holim'a metsi e ka tlase ho 5% (e lekoa ka mor'a 100 process cycles).

5. E lumellana le mehlala e tloaelehileng lefatšeng ka bophara

E ts'ehetsa ho itloaetsa ka bophara ho tloha ho 50 ho isa ho 500mm.

6. Phello e feletseng ea litšenyehelo tsa litšenyehelo tsa bophelo

Potoloho ea tlhokomelo e ekelitsoe ho makhetlo a mararo ho feta lihlahisoa tse tloaelehileng.

Sekhahla sa lihlahisoa tsa li-wafers tsa epitaxial se eketsehile ka 2-3%.

Matla a Khamphani

Semixlab Technology Co., Ltd e na le litsi tse 2 tsa R&D, metheo ea tlhahiso ea 2, mela ea tlhahiso ea 12, basebetsi ba 150+, le litlaleho tsa matsete a R&D ho feta 30%. Sebopeho sa sehlahisoa sa rona se sebelisoa haholo-holo ho LED, potoloho e kopantsoeng ea IC, semiconductor ea moloko oa boraro, photovoltaic le liindasteri tse ling. Semixlab e na le R&D e matla, tlhahiso le liteko tse kopaneng le bokhoni ba ho netefatsa. Ka nako e ts'oanang, re lula re ntlafatsa theknoloji le lisebelisoa tsa rona ka matsete a limilione tse mashome ka selemo.

Lintlha tsa bohlokoa tsa ts'ebetso

Mekhahlelo ea morero

Thepa ea motheo ke SGL isostatic pressed graphite

Botenya ba ho roala: 80-200μm (customizable)

Bohloeki ba ho roala ke ≥99.9999%

Boima: 1.85-1.90 g/cm³

Thermal conductivity: 125 W/m·K (RT)

Flexural matla ≥45 MPa

Thempereichara ea ho sebetsa ≤1800°C (sepakapaka sa inert)

Sistimi ea netefatso ea boleng

Ts'ebetso e felletseng ea ts'ebetso: Rekoto e felletseng ea data ho tloha substrate ea graphite ho isa ts'ebetsong ea ho roala.

Ho lemoha ka nepo: Tlhahlobo ea ho roala ka SEM/EDS, tlhahlobo ea leak ea helium mass spectrometry, tlhahlobo ea mocheso o phahameng oa mocheso.

Lintho tsa mantlha tsa 'mele tsa ho roala CVD SiC:

Maemo a kopo kapa lisebelisoa: Lisebelisoa tsa Aixtron Epi

Maemo a ts'ebeliso ea mantlha

● LED chip tlhahiso: GaN blue / white LED epitaxial kgolo.

● Li-semiconductors tsa matla: Lisebelisoa tsa matla tsa SiC / GaN (MOSFET, HEMT).

● Lisebelisoa tsa 5G radio frequency: high frequency microwave radio frequency chip substrate.

● Laser diode: VCSEL, mokhoa oa laser epitaxial o ntšang moeli.

● Liphutheloana tse tsoetseng pele: Ho beha lifilimi tse tšesaane tsa semiconductor tsa boleng bo holimo.

Kakaretso ea ketane ea indasteri ea semiconductor chip epitaxy: